Chemical vapor deposition of MoS2 films

Jihun Mun; Dongbin Kim; Juyoung Yun; Yonghyeon Shin; Sangwoo Kang; Taesung Kim

doi:10.1149/05807.0199ecst

Chemical vapor deposition of MoS₂ films

Jihun Mun
, Dongbin Kim
, Juyoung Yun
, Yonghyeon Shin
, Sangwoo Kang
, Taesung Kim

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The MoS₂ films were deposited on the titanium nitride (TiN) substrate using chemical vapor deposition (CVD) method. The molybdenum hexacarbonyl (Mo(CO)₆) and hydrogen sulfide (H₂S) as a precursor and reaction gas, respectively. Preliminary analysis of Mo(CO) ₆ which decomposed about 200 degree Celsius under low pressure condition was carried out using Fourier transform infrared spectroscopy (FT-IR). The MoS₂ films deposited under the various substrate temperature, chamber pressure, and flow rate were analyzed using scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and Raman spectroscopy. The result of Raman spectroscopy shows the bulk MoS2 Raman shift for samples deposited on the specific conditions.

Original language	English
Pages (from-to)	199-202
Number of pages	4
Journal	ECS Transactions
Volume	58
Issue number	7
DOIs	https://doi.org/10.1149/05807.0199ecst
State	Published - 2013

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title = "Chemical vapor deposition of MoS2 films",

abstract = "The MoS2 films were deposited on the titanium nitride (TiN) substrate using chemical vapor deposition (CVD) method. The molybdenum hexacarbonyl (Mo(CO)6) and hydrogen sulfide (H2S) as a precursor and reaction gas, respectively. Preliminary analysis of Mo(CO) 6 which decomposed about 200 degree Celsius under low pressure condition was carried out using Fourier transform infrared spectroscopy (FT-IR). The MoS2 films deposited under the various substrate temperature, chamber pressure, and flow rate were analyzed using scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and Raman spectroscopy. The result of Raman spectroscopy shows the bulk MoS2 Raman shift for samples deposited on the specific conditions.",

author = "Jihun Mun and Dongbin Kim and Juyoung Yun and Yonghyeon Shin and Sangwoo Kang and Taesung Kim",

year = "2013",

doi = "10.1149/05807.0199ecst",

language = "English",

volume = "58",

pages = "199--202",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Institute of Physics",

number = "7",

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TY - JOUR

T1 - Chemical vapor deposition of MoS2 films

AU - Mun, Jihun

AU - Kim, Dongbin

AU - Yun, Juyoung

AU - Shin, Yonghyeon

AU - Kang, Sangwoo

AU - Kim, Taesung

PY - 2013

Y1 - 2013

N2 - The MoS2 films were deposited on the titanium nitride (TiN) substrate using chemical vapor deposition (CVD) method. The molybdenum hexacarbonyl (Mo(CO)6) and hydrogen sulfide (H2S) as a precursor and reaction gas, respectively. Preliminary analysis of Mo(CO) 6 which decomposed about 200 degree Celsius under low pressure condition was carried out using Fourier transform infrared spectroscopy (FT-IR). The MoS2 films deposited under the various substrate temperature, chamber pressure, and flow rate were analyzed using scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and Raman spectroscopy. The result of Raman spectroscopy shows the bulk MoS2 Raman shift for samples deposited on the specific conditions.

AB - The MoS2 films were deposited on the titanium nitride (TiN) substrate using chemical vapor deposition (CVD) method. The molybdenum hexacarbonyl (Mo(CO)6) and hydrogen sulfide (H2S) as a precursor and reaction gas, respectively. Preliminary analysis of Mo(CO) 6 which decomposed about 200 degree Celsius under low pressure condition was carried out using Fourier transform infrared spectroscopy (FT-IR). The MoS2 films deposited under the various substrate temperature, chamber pressure, and flow rate were analyzed using scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and Raman spectroscopy. The result of Raman spectroscopy shows the bulk MoS2 Raman shift for samples deposited on the specific conditions.

UR - https://www.scopus.com/pages/publications/84904889358

U2 - 10.1149/05807.0199ecst

DO - 10.1149/05807.0199ecst

M3 - Article

AN - SCOPUS:84904889358

SN - 1938-5862

VL - 58

SP - 199

EP - 202

JO - ECS Transactions

JF - ECS Transactions

IS - 7

ER -

Chemical vapor deposition of MoS₂ films

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