Charging properties of Si nanocrystals with respect to the varied temperature

H. Yang; S. Y. Sung; Y. J. Choi; J. W. Kim; Y. S. Kim; C. J. Kang

doi:10.1109/IMNC.2007.4456196

Charging properties of Si nanocrystals with respect to the varied temperature

H. Yang, S. Y. Sung, Y. J. Choi, J. W. Kim, Y. S. Kim, C. J. Kang

Myongji University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

To investigate electrical properties of Si NCs, we used a SCM. Charging and discharging effects of a NC were analyzed through the dC/dV-V curve shift and the SCM images. We performed capacitance spectroscopy on a NC with varying temperature of the substrate. The results show that charge storing ability of a NC increased and charged NC was discharged more quickly at higher temperature. Capacitance spectroscopy and related SCM images show that SCM can be an adequate tool for more detailed analysis of charging and discharging effects of each NC.

Original language	English
Title of host publication	Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
Pages	246-247
Number of pages	2
DOIs	https://doi.org/10.1109/IMNC.2007.4456196
State	Published - 2007
Externally published	Yes
Event	s20th International Microprocesses and Nanotechnology Conference, MNC 2007 - Kyoto, Japan Duration: 5 Nov 2007 → 8 Nov 2007

Publication series

Name	Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC

Conference

Conference	s20th International Microprocesses and Nanotechnology Conference, MNC 2007
Country/Territory	Japan
City	Kyoto
Period	5/11/07 → 8/11/07

Access to Document

10.1109/IMNC.2007.4456196

Cite this

Yang, H., Sung, S. Y., Choi, Y. J., Kim, J. W., Kim, Y. S., & Kang, C. J. (2007). Charging properties of Si nanocrystals with respect to the varied temperature. In Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC (pp. 246-247). Article 4456196 (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC). https://doi.org/10.1109/IMNC.2007.4456196

Yang, H. ; Sung, S. Y. ; Choi, Y. J. et al. / Charging properties of Si nanocrystals with respect to the varied temperature. Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC. 2007. pp. 246-247 (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC).

@inproceedings{9a0006d573f242d085c664b4eed1e74f,

title = "Charging properties of Si nanocrystals with respect to the varied temperature",

abstract = "To investigate electrical properties of Si NCs, we used a SCM. Charging and discharging effects of a NC were analyzed through the dC/dV-V curve shift and the SCM images. We performed capacitance spectroscopy on a NC with varying temperature of the substrate. The results show that charge storing ability of a NC increased and charged NC was discharged more quickly at higher temperature. Capacitance spectroscopy and related SCM images show that SCM can be an adequate tool for more detailed analysis of charging and discharging effects of each NC.",

author = "H. Yang and Sung, \{S. Y.\} and Choi, \{Y. J.\} and Kim, \{J. W.\} and Kim, \{Y. S.\} and Kang, \{C. J.\}",

year = "2007",

doi = "10.1109/IMNC.2007.4456196",

language = "English",

isbn = "4990247248",

series = "Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC",

pages = "246--247",

booktitle = "Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC",

note = "s20th International Microprocesses and Nanotechnology Conference, MNC 2007 ; Conference date: 05-11-2007 Through 08-11-2007",

}

Yang, H, Sung, SY, Choi, YJ, Kim, JW, Kim, YS & Kang, CJ 2007, Charging properties of Si nanocrystals with respect to the varied temperature. in Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC., 4456196, Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC, pp. 246-247, s20th International Microprocesses and Nanotechnology Conference, MNC 2007, Kyoto, Japan, 5/11/07. https://doi.org/10.1109/IMNC.2007.4456196

Charging properties of Si nanocrystals with respect to the varied temperature. / Yang, H.; Sung, S. Y.; Choi, Y. J. et al.
Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC. 2007. p. 246-247 4456196 (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Charging properties of Si nanocrystals with respect to the varied temperature

AU - Yang, H.

AU - Sung, S. Y.

AU - Choi, Y. J.

AU - Kim, J. W.

AU - Kim, Y. S.

AU - Kang, C. J.

PY - 2007

Y1 - 2007

N2 - To investigate electrical properties of Si NCs, we used a SCM. Charging and discharging effects of a NC were analyzed through the dC/dV-V curve shift and the SCM images. We performed capacitance spectroscopy on a NC with varying temperature of the substrate. The results show that charge storing ability of a NC increased and charged NC was discharged more quickly at higher temperature. Capacitance spectroscopy and related SCM images show that SCM can be an adequate tool for more detailed analysis of charging and discharging effects of each NC.

AB - To investigate electrical properties of Si NCs, we used a SCM. Charging and discharging effects of a NC were analyzed through the dC/dV-V curve shift and the SCM images. We performed capacitance spectroscopy on a NC with varying temperature of the substrate. The results show that charge storing ability of a NC increased and charged NC was discharged more quickly at higher temperature. Capacitance spectroscopy and related SCM images show that SCM can be an adequate tool for more detailed analysis of charging and discharging effects of each NC.

UR - https://www.scopus.com/pages/publications/47349128291

U2 - 10.1109/IMNC.2007.4456196

DO - 10.1109/IMNC.2007.4456196

M3 - Conference contribution

AN - SCOPUS:47349128291

SN - 4990247248

SN - 9784990247249

T3 - Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC

SP - 246

EP - 247

BT - Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC

T2 - s20th International Microprocesses and Nanotechnology Conference, MNC 2007

Y2 - 5 November 2007 through 8 November 2007

ER -

Yang H, Sung SY, Choi YJ, Kim JW, Kim YS, Kang CJ. Charging properties of Si nanocrystals with respect to the varied temperature. In Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC. 2007. p. 246-247. 4456196. (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC). doi: 10.1109/IMNC.2007.4456196

Charging properties of Si nanocrystals with respect to the varied temperature

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