Charging effect of a nc-Si in a SiO2 layer observed by scanning probe microscopy

J. M. Son; J. M. Kim; Y. Khang; E. H. Lee; S. I. Park; Y. S. Kim; C. J. Kang

doi:10.1557/proc-862-a8.7

Charging effect of a nc-Si in a SiO₂ layer observed by scanning probe microscopy

J. M. Son, J. M. Kim, Y. Khang, E. H. Lee, S. I. Park, Y. S. Kim, C. J. Kang

Research output: Contribution to journal › Conference article › peer-review

Abstract

Scanning probe microscopy (SPM) with a conducting tip has been used to electrically probe silicon nanocrystals (NCs) on an insulating substrate. NC samples were produced by aerosol techniques followed by a sharpening oxidation. The size of NCs is in the range of 10-50nm and deposited on a silicon substrate with a density of around 10¹¹/cm². Using a conducting tip, the charge was injected directly into the NCs, and the bias dependent images due to the trapped charges in the NCs were monitored. Charging effects affected by the size of NCs and injection direction were also estimated from the apparent height differences of the NCs with respect to the applied bias.

Original language	English
Article number	A8.7
Pages (from-to)	331-336
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	862
DOIs	https://doi.org/10.1557/proc-862-a8.7
State	Published - 2005
Externally published	Yes
Event	2005 Materials Research Society Spring Meeting - San Francisco, CA, United States Duration: 28 Mar 2005 → 1 Apr 2005

Access to Document

10.1557/proc-862-a8.7

Cite this

@article{be26784a88cc4f16b316776ee58ce4ab,

title = "Charging effect of a nc-Si in a SiO2 layer observed by scanning probe microscopy",

abstract = "Scanning probe microscopy (SPM) with a conducting tip has been used to electrically probe silicon nanocrystals (NCs) on an insulating substrate. NC samples were produced by aerosol techniques followed by a sharpening oxidation. The size of NCs is in the range of 10-50nm and deposited on a silicon substrate with a density of around 1011/cm2. Using a conducting tip, the charge was injected directly into the NCs, and the bias dependent images due to the trapped charges in the NCs were monitored. Charging effects affected by the size of NCs and injection direction were also estimated from the apparent height differences of the NCs with respect to the applied bias.",

author = "Son, \{J. M.\} and Kim, \{J. M.\} and Y. Khang and Lee, \{E. H.\} and Park, \{S. I.\} and Kim, \{Y. S.\} and Kang, \{C. J.\}",

year = "2005",

doi = "10.1557/proc-862-a8.7",

language = "English",

volume = "862",

pages = "331--336",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "2005 Materials Research Society Spring Meeting ; Conference date: 28-03-2005 Through 01-04-2005",

}

TY - JOUR

T1 - Charging effect of a nc-Si in a SiO2 layer observed by scanning probe microscopy

AU - Son, J. M.

AU - Kim, J. M.

AU - Khang, Y.

AU - Lee, E. H.

AU - Park, S. I.

AU - Kim, Y. S.

AU - Kang, C. J.

PY - 2005

Y1 - 2005

N2 - Scanning probe microscopy (SPM) with a conducting tip has been used to electrically probe silicon nanocrystals (NCs) on an insulating substrate. NC samples were produced by aerosol techniques followed by a sharpening oxidation. The size of NCs is in the range of 10-50nm and deposited on a silicon substrate with a density of around 1011/cm2. Using a conducting tip, the charge was injected directly into the NCs, and the bias dependent images due to the trapped charges in the NCs were monitored. Charging effects affected by the size of NCs and injection direction were also estimated from the apparent height differences of the NCs with respect to the applied bias.

AB - Scanning probe microscopy (SPM) with a conducting tip has been used to electrically probe silicon nanocrystals (NCs) on an insulating substrate. NC samples were produced by aerosol techniques followed by a sharpening oxidation. The size of NCs is in the range of 10-50nm and deposited on a silicon substrate with a density of around 1011/cm2. Using a conducting tip, the charge was injected directly into the NCs, and the bias dependent images due to the trapped charges in the NCs were monitored. Charging effects affected by the size of NCs and injection direction were also estimated from the apparent height differences of the NCs with respect to the applied bias.

UR - https://www.scopus.com/pages/publications/30544445210

U2 - 10.1557/proc-862-a8.7

DO - 10.1557/proc-862-a8.7

M3 - Conference article

AN - SCOPUS:30544445210

SN - 0272-9172

VL - 862

SP - 331

EP - 336

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

M1 - A8.7

T2 - 2005 Materials Research Society Spring Meeting

Y2 - 28 March 2005 through 1 April 2005

ER -

Charging effect of a nc-Si in a SiO₂ layer observed by scanning probe microscopy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this