Charged impurity-scattering-limited low-temperature resistivity of low-density silicon inversion layers

We calculate within the Boltzmann equation approach the charged impurity-scattering-limited low-temperature electronic resistivity of low-density n-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical crossover in the transport behavior in the 0- 5 K temperature range, with the low-density, low-temperature mobility showing a strikingly strong nonmonotonic temperature dependence, which may qualitatively explain the recently observed anomalously strong temperature dependent resistivity in low-density, high-mobility MOSFETs.