Charge storage effect on in₂O₃ nanowires with ruthenium comolex molecules

Charge storage effect on In₂O₃ nanowire field-effect transistors (FETs) is controlled by a chemical gate, ruthenlum(II) terpyridine (Ru^II-tpy) complex molecules. In₂O₃ nanowire FETs functionalized with a self-assembled monolayer of the molecules exhibit large hysteretic characteristics with regard to source-drain current vs gate voltage characteristics. The devices are operated with reversible switching behavior at gate voltage cycles of writing, reading, erasing, and reading, and their retention time is in excess of 1000s. These results reveal that the reversible chemical reaction (i.e., oxidation and reduction of the molecules) of Ru^II-tpy complexes produces a charging/discharging process of In₂O₃ nanowire FETs.