Characterization on polymerized thin films for low-k insulator using PECVD

Plasma polymerized cyclohexane and TEOS hybrid thin films have been deposited on silicon substrates at room temperature with varying RF power by plasma-enhanced chemical vapor deposition (PECVD) method. As-grown thin films were annealed in vacuum. Cyclohexane monomer was utilized as organic precursor and TEOS monomer as inorganic precursor. Hydrogen and argon were used as bubbler and carrier gases, respectively. The as-grown plasma polymerized hybrid thin films were analyzed by FT-IR spectroscopy, hardness and modulus measurements, and electrical properties. Annealed hybrid thin films were also analyzed. The dielectric constant of thin films increases with increasing plasma power.