Characterization of the ultra thin films of silicon oxynitride deposited by plasma-assisted N2O oxidation for thin film transistors

Sunghyun Hwang; Sungwook Jung; Hyunmin Kim; Junsik Kim; Kyung Soo Jang; Jeoungln Lee; Kwangsoo Lee; Wonjune Jung; S. K. Dhungel; S. N. Ghosh; J. Yi

Characterization of the ultra thin films of silicon oxynitride deposited by plasma-assisted N₂O oxidation for thin film transistors

Sunghyun Hwang
, Sungwook Jung
, Hyunmin Kim
, Junsik Kim
, Kyung Soo Jang
, Jeoungln Lee
, Kwangsoo Lee
, Wonjune Jung
, S. K. Dhungel
, S. N. Ghosh
, J. Yi

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Contribution to journal › Conference article › peer-review

Abstract

Scaling rules for TFT application devices have led to the necessity of ultra thin dielectric films and high-k dielectric layers. In this paper, The advantages of high concentration of nitrogen in silicon oxide layer deposited by using N₂O in Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) is investigated using X-ray energy dispersive spectroscopy (EDS). We have reported about Ellipsometric measurement, Capacitance - Voltage characterization and processing conditions.

Original language	English
Pages (from-to)	1462-1464
Number of pages	3
Journal	Proceedings of International Meeting on Information Display
Volume	2006
State	Published - 2006
Event	IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of Duration: 22 Aug 2006 → 25 Aug 2006

Cite this

@article{f2a509ff07404305a6aec7f7c005240b,

title = "Characterization of the ultra thin films of silicon oxynitride deposited by plasma-assisted N2O oxidation for thin film transistors",

abstract = "Scaling rules for TFT application devices have led to the necessity of ultra thin dielectric films and high-k dielectric layers. In this paper, The advantages of high concentration of nitrogen in silicon oxide layer deposited by using N2O in Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) is investigated using X-ray energy dispersive spectroscopy (EDS). We have reported about Ellipsometric measurement, Capacitance - Voltage characterization and processing conditions.",

author = "Sunghyun Hwang and Sungwook Jung and Hyunmin Kim and Junsik Kim and Jang, \{Kyung Soo\} and Jeoungln Lee and Kwangsoo Lee and Wonjune Jung and Dhungel, \{S. K.\} and Ghosh, \{S. N.\} and J. Yi",

year = "2006",

language = "English",

volume = "2006",

pages = "1462--1464",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference ; Conference date: 22-08-2006 Through 25-08-2006",

}

TY - JOUR

T1 - Characterization of the ultra thin films of silicon oxynitride deposited by plasma-assisted N2O oxidation for thin film transistors

AU - Hwang, Sunghyun

AU - Jung, Sungwook

AU - Kim, Hyunmin

AU - Kim, Junsik

AU - Jang, Kyung Soo

AU - Lee, Jeoungln

AU - Lee, Kwangsoo

AU - Jung, Wonjune

AU - Dhungel, S. K.

AU - Ghosh, S. N.

AU - Yi, J.

PY - 2006

Y1 - 2006

N2 - Scaling rules for TFT application devices have led to the necessity of ultra thin dielectric films and high-k dielectric layers. In this paper, The advantages of high concentration of nitrogen in silicon oxide layer deposited by using N2O in Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) is investigated using X-ray energy dispersive spectroscopy (EDS). We have reported about Ellipsometric measurement, Capacitance - Voltage characterization and processing conditions.

AB - Scaling rules for TFT application devices have led to the necessity of ultra thin dielectric films and high-k dielectric layers. In this paper, The advantages of high concentration of nitrogen in silicon oxide layer deposited by using N2O in Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) is investigated using X-ray energy dispersive spectroscopy (EDS). We have reported about Ellipsometric measurement, Capacitance - Voltage characterization and processing conditions.

UR - https://www.scopus.com/pages/publications/33846146679

M3 - Conference article

AN - SCOPUS:33846146679

SN - 1738-7558

VL - 2006

SP - 1462

EP - 1464

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

T2 - IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference

Y2 - 22 August 2006 through 25 August 2006

ER -

Characterization of the ultra thin films of silicon oxynitride deposited by plasma-assisted N₂O oxidation for thin film transistors

Abstract

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