Abstract
We report the effect of strain-induced indium clustering on the emission properties of InGaN/GaN multiple quantum wells grown with high indium composition by MOCVD. Nanosize indium clustering confirmed by high-resolution transmission electron microscopy results in the redshift of the emission peak and the increase of the integrated photoluminescence (PL) intensity. We found that strong carrier localization in indium clustering induces the increases of the activation energy of PL integrated intensity and the temperature independence of PL decay profiles. All these observations suggest structurally and optically that the improved emission properties in the InGaN/GaN multiple quantum well with high indium composition are associated with the localized states in the nano-size indium cluster.
| Original language | English |
|---|---|
| Pages (from-to) | 257-261 |
| Number of pages | 5 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 775 |
| DOIs | |
| State | Published - 2003 |
| Externally published | Yes |
| Event | Self-Assembled Nanostructured Materials - San Francisco, CA, United States Duration: 22 Apr 2003 → 25 Apr 2003 |
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