Characterization of low mole fraction In-doped-ZnO/Si (111) heterostructure grown by pulsed laser deposition

Ju Young Lee; Bo Ra Jang; Jong Hoon Lee; Hong Seung Kim; Hyung Koun Cho; Jin Young Moon; Ho Seong Lee; Won Jae Lee; Jin Wook Baek

doi:10.1016/j.tsf.2009.01.172

Characterization of low mole fraction In-doped-ZnO/Si (111) heterostructure grown by pulsed laser deposition

Ju Young Lee
, Bo Ra Jang
, Jong Hoon Lee
, Hong Seung Kim
, Hyung Koun Cho
, Jin Young Moon
, Ho Seong Lee
, Won Jae Lee
, Jin Wook Baek

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

In-doped ZnO films with low mole fraction (0.1, 0.3, 0.6 at.%) were prepared on p-Si (111) at 600 °C by the pulsed laser deposition (PLD). The effect of composition on structures, optical and electrical properties was studied by X-ray diffraction, atomic force microscopy, photoluminescence, and the Hall Effect measurement system. In-doped ZnO film has (101) preferred orientation and UV emissions of ZnO:In films were red shift with increasing In contents and there are no deep-level emissions. The lowest resistivity of 5.6 × 10^{- 2} Ωcm and highest mobility of 33.1 cm²/Vs was observed at the In content of 0.3 at.%.

Original language	English
Pages (from-to)	4086-4089
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	14
DOIs	https://doi.org/10.1016/j.tsf.2009.01.172
State	Published - 29 May 2009

Keywords

Heterostructure
In-doped ZnO
PLD

Access to Document

10.1016/j.tsf.2009.01.172

Cite this

@article{ea01243114c4446dbdf0404a9c091e4d,

title = "Characterization of low mole fraction In-doped-ZnO/Si (111) heterostructure grown by pulsed laser deposition",

abstract = "In-doped ZnO films with low mole fraction (0.1, 0.3, 0.6 at.\%) were prepared on p-Si (111) at 600 °C by the pulsed laser deposition (PLD). The effect of composition on structures, optical and electrical properties was studied by X-ray diffraction, atomic force microscopy, photoluminescence, and the Hall Effect measurement system. In-doped ZnO film has (101) preferred orientation and UV emissions of ZnO:In films were red shift with increasing In contents and there are no deep-level emissions. The lowest resistivity of 5.6 × 10- 2 Ωcm and highest mobility of 33.1 cm2/Vs was observed at the In content of 0.3 at.\%.",

keywords = "Heterostructure, In-doped ZnO, PLD",

author = "Lee, \{Ju Young\} and Jang, \{Bo Ra\} and Lee, \{Jong Hoon\} and Kim, \{Hong Seung\} and Cho, \{Hyung Koun\} and Moon, \{Jin Young\} and Lee, \{Ho Seong\} and Lee, \{Won Jae\} and Baek, \{Jin Wook\}",

year = "2009",

month = may,

day = "29",

doi = "10.1016/j.tsf.2009.01.172",

language = "English",

volume = "517",

pages = "4086--4089",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "14",

}

TY - JOUR

T1 - Characterization of low mole fraction In-doped-ZnO/Si (111) heterostructure grown by pulsed laser deposition

AU - Lee, Ju Young

AU - Jang, Bo Ra

AU - Lee, Jong Hoon

AU - Kim, Hong Seung

AU - Cho, Hyung Koun

AU - Moon, Jin Young

AU - Lee, Ho Seong

AU - Lee, Won Jae

AU - Baek, Jin Wook

PY - 2009/5/29

Y1 - 2009/5/29

N2 - In-doped ZnO films with low mole fraction (0.1, 0.3, 0.6 at.%) were prepared on p-Si (111) at 600 °C by the pulsed laser deposition (PLD). The effect of composition on structures, optical and electrical properties was studied by X-ray diffraction, atomic force microscopy, photoluminescence, and the Hall Effect measurement system. In-doped ZnO film has (101) preferred orientation and UV emissions of ZnO:In films were red shift with increasing In contents and there are no deep-level emissions. The lowest resistivity of 5.6 × 10- 2 Ωcm and highest mobility of 33.1 cm2/Vs was observed at the In content of 0.3 at.%.

AB - In-doped ZnO films with low mole fraction (0.1, 0.3, 0.6 at.%) were prepared on p-Si (111) at 600 °C by the pulsed laser deposition (PLD). The effect of composition on structures, optical and electrical properties was studied by X-ray diffraction, atomic force microscopy, photoluminescence, and the Hall Effect measurement system. In-doped ZnO film has (101) preferred orientation and UV emissions of ZnO:In films were red shift with increasing In contents and there are no deep-level emissions. The lowest resistivity of 5.6 × 10- 2 Ωcm and highest mobility of 33.1 cm2/Vs was observed at the In content of 0.3 at.%.

KW - Heterostructure

KW - In-doped ZnO

KW - PLD

UR - https://www.scopus.com/pages/publications/65449187821

U2 - 10.1016/j.tsf.2009.01.172

DO - 10.1016/j.tsf.2009.01.172

M3 - Article

AN - SCOPUS:65449187821

SN - 0040-6090

VL - 517

SP - 4086

EP - 4089

JO - Thin Solid Films

JF - Thin Solid Films

IS - 14

ER -

Characterization of low mole fraction In-doped-ZnO/Si (111) heterostructure grown by pulsed laser deposition

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this