Characterization of electrical properties of Si nanocrystals embedded in an insulating layer by scanning probe microscopy

  • Jung Min Kim
  • , Hyun Jung Her
  • , Jeong Min Son
  • , Y. Khang
  • , Eun Hye Lee
  • , Yong Sang Kim
  • , Y. J. Choi
  • , C. J. Kang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Scanning probe microscope (SPM) with a conducting tip was used to electrically probe silicon nanocrystals (Si NCs) embedded in a SiO2 layer. The Si NCs were generated by the laser ablation method with compressed Si powder followed by a sharpening oxidation. The size of Si NCs is in the range of 10-50 nm, and the density is around 1011 /cm2. Using a conducting tip, the charge was injected directly into each Si NC, and the image contrast change and dC/dV curve shift caused by the trapped charges were monitored. The results were compared with those of the conventional MOS capacitor.

Original languageEnglish
Title of host publicationEco-Materials Processing and Design VII - Proceedings of the Conference of the 7th International Symposium on Eco-Materials Processing and Design, ISEPD-7
PublisherTrans Tech Publications Ltd
Pages1094-1097
Number of pages4
ISBN (Print)0878499954, 9780878499953
DOIs
StatePublished - 2006
Externally publishedYes
Event7th International Symposium on Eco-Materials Processing and Design, ISEPD-7 - Chengdu, China
Duration: 8 Jan 200611 Jan 2006

Publication series

NameMaterials Science Forum
Volume510-511
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference7th International Symposium on Eco-Materials Processing and Design, ISEPD-7
Country/TerritoryChina
CityChengdu
Period8/01/0611/01/06

Keywords

  • Localized electrical properties
  • Scanning probe microscopy
  • Si nanocrystal

Fingerprint

Dive into the research topics of 'Characterization of electrical properties of Si nanocrystals embedded in an insulating layer by scanning probe microscopy'. Together they form a unique fingerprint.

Cite this