Characterization of deposited Si-clusters by studying their chemical reactivity

M. Mathes; M. Grass; Y. D. Kim; G. Ganteför

doi:10.1016/j.susc.2004.01.014

Characterization of deposited Si-clusters by studying their chemical reactivity

M. Mathes, M. Grass, Y. D. Kim, G. Ganteför

University of Konstanz

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Deposited Si-monomers and Si-tetramers on HOPG and amorphous carbon surfaces are studied using XPS. Si-monomers on amorphous carbon show identical structures to those of the Si carbides and/or silicon oxides. In contrast, deposited Si-tetramers are inert towards carbide and oxide formation. Chemical properties of deposited Si-tetramers are identical to those of the free Si-tetramer clusters in the gas phase, implying that the deposited Si-tetramers should experience only minor changes from their original geometric and electronic structures of the free Si-tetramer clusters. We demonstrate that investigations on chemical activities of deposited magic clusters are useful to figure out, if the original cluster structures remain unchanged or not upon deposition.

Original language	English
Pages (from-to)	L58-L62
Journal	Surface Science
Volume	552
Issue number	1-3
DOIs	https://doi.org/10.1016/j.susc.2004.01.014
State	Published - 10 Mar 2004
Externally published	Yes

Keywords

Oxygen
Silicon
Silicon carbide
Silicon oxides
X-ray photoelectron spectroscopy

Access to Document

10.1016/j.susc.2004.01.014

Cite this

@article{4089b43f69df4bf48ef3feb4d8155cbb,

title = "Characterization of deposited Si-clusters by studying their chemical reactivity",

abstract = "Deposited Si-monomers and Si-tetramers on HOPG and amorphous carbon surfaces are studied using XPS. Si-monomers on amorphous carbon show identical structures to those of the Si carbides and/or silicon oxides. In contrast, deposited Si-tetramers are inert towards carbide and oxide formation. Chemical properties of deposited Si-tetramers are identical to those of the free Si-tetramer clusters in the gas phase, implying that the deposited Si-tetramers should experience only minor changes from their original geometric and electronic structures of the free Si-tetramer clusters. We demonstrate that investigations on chemical activities of deposited magic clusters are useful to figure out, if the original cluster structures remain unchanged or not upon deposition.",

keywords = "Oxygen, Silicon, Silicon carbide, Silicon oxides, X-ray photoelectron spectroscopy",

author = "M. Mathes and M. Grass and Kim, \{Y. D.\} and G. Gantef{\"o}r",

year = "2004",

month = mar,

day = "10",

doi = "10.1016/j.susc.2004.01.014",

language = "English",

volume = "552",

pages = "L58--L62",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "1-3",

}

TY - JOUR

T1 - Characterization of deposited Si-clusters by studying their chemical reactivity

AU - Mathes, M.

AU - Grass, M.

AU - Kim, Y. D.

AU - Ganteför, G.

PY - 2004/3/10

Y1 - 2004/3/10

N2 - Deposited Si-monomers and Si-tetramers on HOPG and amorphous carbon surfaces are studied using XPS. Si-monomers on amorphous carbon show identical structures to those of the Si carbides and/or silicon oxides. In contrast, deposited Si-tetramers are inert towards carbide and oxide formation. Chemical properties of deposited Si-tetramers are identical to those of the free Si-tetramer clusters in the gas phase, implying that the deposited Si-tetramers should experience only minor changes from their original geometric and electronic structures of the free Si-tetramer clusters. We demonstrate that investigations on chemical activities of deposited magic clusters are useful to figure out, if the original cluster structures remain unchanged or not upon deposition.

AB - Deposited Si-monomers and Si-tetramers on HOPG and amorphous carbon surfaces are studied using XPS. Si-monomers on amorphous carbon show identical structures to those of the Si carbides and/or silicon oxides. In contrast, deposited Si-tetramers are inert towards carbide and oxide formation. Chemical properties of deposited Si-tetramers are identical to those of the free Si-tetramer clusters in the gas phase, implying that the deposited Si-tetramers should experience only minor changes from their original geometric and electronic structures of the free Si-tetramer clusters. We demonstrate that investigations on chemical activities of deposited magic clusters are useful to figure out, if the original cluster structures remain unchanged or not upon deposition.

KW - Oxygen

KW - Silicon

KW - Silicon carbide

KW - Silicon oxides

KW - X-ray photoelectron spectroscopy

UR - https://www.scopus.com/pages/publications/1342264257

U2 - 10.1016/j.susc.2004.01.014

DO - 10.1016/j.susc.2004.01.014

M3 - Article

AN - SCOPUS:1342264257

SN - 0039-6028

VL - 552

SP - L58-L62

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Characterization of deposited Si-clusters by studying their chemical reactivity

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this