Characterization of an oxide trap leading to random telegraph noise in gate-induced drain leakage current of DRAM cell transistors

Byoungchan Oh; Heung Jae Cho; Heesang Kim; Younghwan Son; Taewook Kang; Sunyoung Park; Seunghyun Jang; Jong Ho Lee; Hyungcheol Shin

doi:10.1109/TED.2011.2126046

Characterization of an oxide trap leading to random telegraph noise in gate-induced drain leakage current of DRAM cell transistors

Byoungchan Oh, Heung Jae Cho, Heesang Kim, Younghwan Son, Taewook Kang, Sunyoung Park, Seunghyun Jang, Jong Ho Lee, Hyungcheol Shin

Seoul National University

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

An accurate method for extracting the depth and the energy level of an oxide trap from random telegraph noise (RTN) in the gate-induced drain leakage (GIDL) current of a metal-oxide-semiconductor field-effect transistor (MOSFET) is developed, which correctly accounts for variation in surface potential and Coulomb energy. The technique employs trap capture and emission times defined from the characteristics of GIDL. Ignoring this variation in surface potential leads to an error of up to 116% in trap depth for 80-nm technology generation MOSFETs. RTN amplitude as a function of MOSFET draingate voltage is also investigated.

Original language	English
Article number	5741836
Pages (from-to)	1741-1747
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	6
DOIs	https://doi.org/10.1109/TED.2011.2126046
State	Published - Jun 2011
Externally published	Yes

Keywords

Gate-induced drain leakage (GIDL)
low frequency noise
random telegraph noise (RTN)
retention time
trap energy level
trap location

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10.1109/TED.2011.2126046

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@article{7732784f191b4d189988a849bf6cd49a,

title = "Characterization of an oxide trap leading to random telegraph noise in gate-induced drain leakage current of DRAM cell transistors",

abstract = "An accurate method for extracting the depth and the energy level of an oxide trap from random telegraph noise (RTN) in the gate-induced drain leakage (GIDL) current of a metal-oxide-semiconductor field-effect transistor (MOSFET) is developed, which correctly accounts for variation in surface potential and Coulomb energy. The technique employs trap capture and emission times defined from the characteristics of GIDL. Ignoring this variation in surface potential leads to an error of up to 116\% in trap depth for 80-nm technology generation MOSFETs. RTN amplitude as a function of MOSFET draingate voltage is also investigated.",

keywords = "Gate-induced drain leakage (GIDL), low frequency noise, random telegraph noise (RTN), retention time, trap energy level, trap location",

author = "Byoungchan Oh and Cho, \{Heung Jae\} and Heesang Kim and Younghwan Son and Taewook Kang and Sunyoung Park and Seunghyun Jang and Lee, \{Jong Ho\} and Hyungcheol Shin",

year = "2011",

month = jun,

doi = "10.1109/TED.2011.2126046",

language = "English",

volume = "58",

pages = "1741--1747",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Characterization of an oxide trap leading to random telegraph noise in gate-induced drain leakage current of DRAM cell transistors

AU - Oh, Byoungchan

AU - Cho, Heung Jae

AU - Kim, Heesang

AU - Son, Younghwan

AU - Kang, Taewook

AU - Park, Sunyoung

AU - Jang, Seunghyun

AU - Lee, Jong Ho

AU - Shin, Hyungcheol

PY - 2011/6

Y1 - 2011/6

N2 - An accurate method for extracting the depth and the energy level of an oxide trap from random telegraph noise (RTN) in the gate-induced drain leakage (GIDL) current of a metal-oxide-semiconductor field-effect transistor (MOSFET) is developed, which correctly accounts for variation in surface potential and Coulomb energy. The technique employs trap capture and emission times defined from the characteristics of GIDL. Ignoring this variation in surface potential leads to an error of up to 116% in trap depth for 80-nm technology generation MOSFETs. RTN amplitude as a function of MOSFET draingate voltage is also investigated.

AB - An accurate method for extracting the depth and the energy level of an oxide trap from random telegraph noise (RTN) in the gate-induced drain leakage (GIDL) current of a metal-oxide-semiconductor field-effect transistor (MOSFET) is developed, which correctly accounts for variation in surface potential and Coulomb energy. The technique employs trap capture and emission times defined from the characteristics of GIDL. Ignoring this variation in surface potential leads to an error of up to 116% in trap depth for 80-nm technology generation MOSFETs. RTN amplitude as a function of MOSFET draingate voltage is also investigated.

KW - Gate-induced drain leakage (GIDL)

KW - low frequency noise

KW - random telegraph noise (RTN)

KW - retention time

KW - trap energy level

KW - trap location

UR - https://www.scopus.com/pages/publications/79957660250

U2 - 10.1109/TED.2011.2126046

DO - 10.1109/TED.2011.2126046

M3 - Article

AN - SCOPUS:79957660250

SN - 0018-9383

VL - 58

SP - 1741

EP - 1747

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

M1 - 5741836

ER -

Characterization of an oxide trap leading to random telegraph noise in gate-induced drain leakage current of DRAM cell transistors

Abstract

Keywords

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