Abstract
12CaO· 7Al2O3 insulator (C12A7) doped indium tin oxide (ITO) (ITO:C12A7) films were fabricated using a radio frequency magnetron co-sputtering system with ITO and C12A7 targets. The qualitative and quantitative properties of ITO:C12A7 films, as a function of C12A7 concentration, were examined via X-ray photoemission spectroscopy and synchrotron X-ray scattering as well as by conducting atomic force microscopy. The work function of ITO:C12A7 (1.3%) films of approximately 2.8 eV obtained by high resolution photoemission spectroscopy measurements make them a reasonable cathode for top-emission organic light-emitting diodes.
| Original language | English |
|---|---|
| Pages (from-to) | 7556-7560 |
| Number of pages | 5 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 13 |
| Issue number | 11 |
| DOIs | |
| State | Published - Nov 2013 |
Keywords
- Dopant
- Inorganic compounds
- Transparent conducting oxides
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