Characteristics of ultrashallow hetero indium-gallium-zinc-oxide/germanium junction

Juhyeon Shin; Jaewoo Shim; Jongtaek Lee; Seung Ha Choi; Woo Shik Jung; Hyun Yong Yu; Yonghan Roh; Jin Hong Park

doi:10.1109/LED.2012.2210992

Characteristics of ultrashallow hetero indium-gallium-zinc-oxide/germanium junction

Juhyeon Shin, Jaewoo Shim, Jongtaek Lee, Seung Ha Choi, Woo Shik Jung, Hyun Yong Yu, Yonghan Roh, Jin Hong Park

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of \sim 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 \circC and 600 \circC, a very high on-current density (\hbox180-320\ \hboxA/cm2), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 \circC anneal, a fairly high on/off-current ratio (\hbox7 \times \hbox102) is also observed.

Original language	English
Article number	6296680
Pages (from-to)	1363-1365
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	10
DOIs	https://doi.org/10.1109/LED.2012.2210992
State	Published - 2012

Keywords

Germanium (Ge)
heterojunction
indium-gallium-zinc-oxide (IGZO)

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10.1109/LED.2012.2210992

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title = "Characteristics of ultrashallow hetero indium-gallium-zinc-oxide/germanium junction",

abstract = "In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of \textbackslash{}sim 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 \textbackslash{}circC and 600 \textbackslash{}circC, a very high on-current density (\textbackslash{}hbox180-320\textbackslash{} \textbackslash{}hboxA/cm2), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 \textbackslash{}circC anneal, a fairly high on/off-current ratio (\textbackslash{}hbox7 \textbackslash{}times \textbackslash{}hbox102) is also observed.",

keywords = "Germanium (Ge), heterojunction, indium-gallium-zinc-oxide (IGZO)",

author = "Juhyeon Shin and Jaewoo Shim and Jongtaek Lee and Choi, \{Seung Ha\} and Jung, \{Woo Shik\} and Yu, \{Hyun Yong\} and Yonghan Roh and Park, \{Jin Hong\}",

year = "2012",

doi = "10.1109/LED.2012.2210992",

language = "English",

volume = "33",

pages = "1363--1365",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

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TY - JOUR

T1 - Characteristics of ultrashallow hetero indium-gallium-zinc-oxide/germanium junction

AU - Shin, Juhyeon

AU - Shim, Jaewoo

AU - Lee, Jongtaek

AU - Choi, Seung Ha

AU - Jung, Woo Shik

AU - Yu, Hyun Yong

AU - Roh, Yonghan

AU - Park, Jin Hong

PY - 2012

Y1 - 2012

N2 - In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of \sim 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 \circC and 600 \circC, a very high on-current density (\hbox180-320\ \hboxA/cm2), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 \circC anneal, a fairly high on/off-current ratio (\hbox7 \times \hbox102) is also observed.

AB - In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of \sim 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 \circC and 600 \circC, a very high on-current density (\hbox180-320\ \hboxA/cm2), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 \circC anneal, a fairly high on/off-current ratio (\hbox7 \times \hbox102) is also observed.

KW - Germanium (Ge)

KW - heterojunction

KW - indium-gallium-zinc-oxide (IGZO)

UR - https://www.scopus.com/pages/publications/84866939099

U2 - 10.1109/LED.2012.2210992

DO - 10.1109/LED.2012.2210992

M3 - Article

AN - SCOPUS:84866939099

SN - 0741-3106

VL - 33

SP - 1363

EP - 1365

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

M1 - 6296680

ER -

Characteristics of ultrashallow hetero indium-gallium-zinc-oxide/germanium junction

Abstract

Keywords

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