Characteristics of tungsten doped nanocrystalline carbon films prepared by unbalanced magnetron sputtering for electronic device

Yong Seob Park; Sung Hwan Hwang; Su Chang Ahn; Soohyun Hwang; Jaehyeong Lee

doi:10.1166/jnn.2017.15047

Characteristics of tungsten doped nanocrystalline carbon films prepared by unbalanced magnetron sputtering for electronic device

Yong Seob Park
, Sung Hwan Hwang
, Su Chang Ahn
, Soohyun Hwang
, Jaehyeong Lee

Department of Electronic and Electrical Engineering

Chosun College of Science and Technology
Korea Photonics Technology Institute
Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Tungsten doped carbon (WC) films were fabricated by unbalanced magnetron sputtering (UBMS) using two targets of carbon and tungsten. The effect of target power density on the structural, surface, and electrical properties of the WC films was investigated. WC films, which fabricated at various target power densities, exhibited uniform and smooth surface. The resistivity values of WC films are decreased with the increase of target power density, and the minimum value was about 6×10^-4 Ω-cm at target power density of 35 W/cm². The increase of target power density contributed to the increase of the sp² bonding contents in carbon films. In the result, we fabricated the OTFT using WC gate electrodes and obtained the good electrical performance of the OTFT devices.

Original language	English
Pages (from-to)	7874-7878
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	17
Issue number	11
DOIs	https://doi.org/10.1166/jnn.2017.15047
State	Published - 2017

Keywords

Organic Thin Film Transistor
Resistivity
Target Power Density
Unbalanced Magnetron Sputtering
W Doped Carbon

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10.1166/jnn.2017.15047

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title = "Characteristics of tungsten doped nanocrystalline carbon films prepared by unbalanced magnetron sputtering for electronic device",

abstract = "Tungsten doped carbon (WC) films were fabricated by unbalanced magnetron sputtering (UBMS) using two targets of carbon and tungsten. The effect of target power density on the structural, surface, and electrical properties of the WC films was investigated. WC films, which fabricated at various target power densities, exhibited uniform and smooth surface. The resistivity values of WC films are decreased with the increase of target power density, and the minimum value was about 6×10-4 Ω-cm at target power density of 35 W/cm2. The increase of target power density contributed to the increase of the sp2 bonding contents in carbon films. In the result, we fabricated the OTFT using WC gate electrodes and obtained the good electrical performance of the OTFT devices.",

keywords = "Organic Thin Film Transistor, Resistivity, Target Power Density, Unbalanced Magnetron Sputtering, W Doped Carbon",

author = "Park, \{Yong Seob\} and Hwang, \{Sung Hwan\} and Ahn, \{Su Chang\} and Soohyun Hwang and Jaehyeong Lee",

year = "2017",

doi = "10.1166/jnn.2017.15047",

language = "English",

volume = "17",

pages = "7874--7878",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

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TY - JOUR

T1 - Characteristics of tungsten doped nanocrystalline carbon films prepared by unbalanced magnetron sputtering for electronic device

AU - Park, Yong Seob

AU - Hwang, Sung Hwan

AU - Ahn, Su Chang

AU - Hwang, Soohyun

AU - Lee, Jaehyeong

PY - 2017

Y1 - 2017

N2 - Tungsten doped carbon (WC) films were fabricated by unbalanced magnetron sputtering (UBMS) using two targets of carbon and tungsten. The effect of target power density on the structural, surface, and electrical properties of the WC films was investigated. WC films, which fabricated at various target power densities, exhibited uniform and smooth surface. The resistivity values of WC films are decreased with the increase of target power density, and the minimum value was about 6×10-4 Ω-cm at target power density of 35 W/cm2. The increase of target power density contributed to the increase of the sp2 bonding contents in carbon films. In the result, we fabricated the OTFT using WC gate electrodes and obtained the good electrical performance of the OTFT devices.

AB - Tungsten doped carbon (WC) films were fabricated by unbalanced magnetron sputtering (UBMS) using two targets of carbon and tungsten. The effect of target power density on the structural, surface, and electrical properties of the WC films was investigated. WC films, which fabricated at various target power densities, exhibited uniform and smooth surface. The resistivity values of WC films are decreased with the increase of target power density, and the minimum value was about 6×10-4 Ω-cm at target power density of 35 W/cm2. The increase of target power density contributed to the increase of the sp2 bonding contents in carbon films. In the result, we fabricated the OTFT using WC gate electrodes and obtained the good electrical performance of the OTFT devices.

KW - Organic Thin Film Transistor

KW - Resistivity

KW - Target Power Density

KW - Unbalanced Magnetron Sputtering

KW - W Doped Carbon

UR - https://www.scopus.com/pages/publications/85027314741

U2 - 10.1166/jnn.2017.15047

DO - 10.1166/jnn.2017.15047

M3 - Article

AN - SCOPUS:85027314741

SN - 1533-4880

VL - 17

SP - 7874

EP - 7878

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 11

ER -

Characteristics of tungsten doped nanocrystalline carbon films prepared by unbalanced magnetron sputtering for electronic device

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Keywords

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