Characteristics of the CdZnS thin film doped by thermal diffusion of vacuum evaporated indium films

Jae Hyeong Lee; Woo Chang Song; Jun Sin Yi; Yeong Sik Yoo

doi:10.1016/S0927-0248(02)00164-2

Characteristics of the CdZnS thin film doped by thermal diffusion of vacuum evaporated indium films

Jae Hyeong Lee
, Woo Chang Song
, Jun Sin Yi
, Yeong Sik Yoo

Department of Electronic and Electrical Engineering

Sungkyunkwan University
Yeojoo Institute of Technology

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Effects of the thickness of indium films and the annealing temperature on structural, optical and electrical properties of chemically deposited cadmium zinc sulfide (CdZnS) films were investigated. X-ray diffraction patterns of CdZnS films indicate that the minimum thickness and annealing temperature for the formation of an In₂O₃ layer, which acts as a barrier preventing the out-diffusion of indium, are 20nm and 350°C, respectively. In₂O₃ layers give the high optical transmittance due to their transparent properties. As the thickness of indium film and the annealing temperature increase, the conductivity of CdZnS films improves and the lowest resistivity of 0.3Ωcm is attained for CdZnS films with 40nm indium coating and annealed at 450°C.

Original language	English
Pages (from-to)	227-234
Number of pages	8
Journal	Solar Energy Materials and Solar Cells
Volume	75
Issue number	1-2
DOIs	https://doi.org/10.1016/S0927-0248(02)00164-2
State	Published - Jan 2003

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Cadmium zinc sulfide
Diffusion
Heat treatment
Indium doping
Solar cells

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10.1016/S0927-0248(02)00164-2

Cite this

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title = "Characteristics of the CdZnS thin film doped by thermal diffusion of vacuum evaporated indium films",

abstract = "Effects of the thickness of indium films and the annealing temperature on structural, optical and electrical properties of chemically deposited cadmium zinc sulfide (CdZnS) films were investigated. X-ray diffraction patterns of CdZnS films indicate that the minimum thickness and annealing temperature for the formation of an In2O3 layer, which acts as a barrier preventing the out-diffusion of indium, are 20nm and 350°C, respectively. In2O3 layers give the high optical transmittance due to their transparent properties. As the thickness of indium film and the annealing temperature increase, the conductivity of CdZnS films improves and the lowest resistivity of 0.3Ωcm is attained for CdZnS films with 40nm indium coating and annealed at 450°C.",

keywords = "Cadmium zinc sulfide, Diffusion, Heat treatment, Indium doping, Solar cells",

author = "Lee, \{Jae Hyeong\} and Song, \{Woo Chang\} and Yi, \{Jun Sin\} and Yoo, \{Yeong Sik\}",

year = "2003",

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doi = "10.1016/S0927-0248(02)00164-2",

language = "English",

volume = "75",

pages = "227--234",

journal = "Solar Energy Materials and Solar Cells",

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publisher = "Elsevier B.V.",

number = "1-2",

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TY - JOUR

T1 - Characteristics of the CdZnS thin film doped by thermal diffusion of vacuum evaporated indium films

AU - Lee, Jae Hyeong

AU - Song, Woo Chang

AU - Yi, Jun Sin

AU - Yoo, Yeong Sik

PY - 2003/1

Y1 - 2003/1

N2 - Effects of the thickness of indium films and the annealing temperature on structural, optical and electrical properties of chemically deposited cadmium zinc sulfide (CdZnS) films were investigated. X-ray diffraction patterns of CdZnS films indicate that the minimum thickness and annealing temperature for the formation of an In2O3 layer, which acts as a barrier preventing the out-diffusion of indium, are 20nm and 350°C, respectively. In2O3 layers give the high optical transmittance due to their transparent properties. As the thickness of indium film and the annealing temperature increase, the conductivity of CdZnS films improves and the lowest resistivity of 0.3Ωcm is attained for CdZnS films with 40nm indium coating and annealed at 450°C.

AB - Effects of the thickness of indium films and the annealing temperature on structural, optical and electrical properties of chemically deposited cadmium zinc sulfide (CdZnS) films were investigated. X-ray diffraction patterns of CdZnS films indicate that the minimum thickness and annealing temperature for the formation of an In2O3 layer, which acts as a barrier preventing the out-diffusion of indium, are 20nm and 350°C, respectively. In2O3 layers give the high optical transmittance due to their transparent properties. As the thickness of indium film and the annealing temperature increase, the conductivity of CdZnS films improves and the lowest resistivity of 0.3Ωcm is attained for CdZnS films with 40nm indium coating and annealed at 450°C.

KW - Cadmium zinc sulfide

KW - Diffusion

KW - Heat treatment

KW - Indium doping

KW - Solar cells

UR - https://www.scopus.com/pages/publications/0037210006

U2 - 10.1016/S0927-0248(02)00164-2

DO - 10.1016/S0927-0248(02)00164-2

M3 - Article

AN - SCOPUS:0037210006

SN - 0927-0248

VL - 75

SP - 227

EP - 234

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 1-2

ER -

Characteristics of the CdZnS thin film doped by thermal diffusion of vacuum evaporated indium films

Abstract

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Keywords

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