TY - JOUR
T1 - Characteristics of SiO X thin films deposited by atmospheric pressure chemical vapor deposition using a double-discharge system
AU - Park, Jaebeom
AU - Oh, Jongsik
AU - Gil, Elly
AU - Yeom, Geun Young
PY - 2012/10
Y1 - 2012/10
N2 - SiO X thin films were deposited using a gas mixture of hexamethyldisilazane (HMDS)/O 2/He/Ar from a remote-type dielectric barrier discharges (DBD) source, with/without the additional direct-type DBD just above the substrate (double discharge), and the effect of the double discharge on the characteristics of the SiO X thin film was investigated. The increase of HMDS flow rate and the decrease of oxygen flow rate in the gas mixture increased the SiO X-thin-film deposition rate. The improvement of the mechanical properties for SiO X film, in addition to the increase of deposition rate, is believed to be related not only to the higher gas dissociation because of the higher power deposition but also to the lesser recombination of oxygen atoms and dissociated HMDS due to the shorter diffusion length to the substrate.
AB - SiO X thin films were deposited using a gas mixture of hexamethyldisilazane (HMDS)/O 2/He/Ar from a remote-type dielectric barrier discharges (DBD) source, with/without the additional direct-type DBD just above the substrate (double discharge), and the effect of the double discharge on the characteristics of the SiO X thin film was investigated. The increase of HMDS flow rate and the decrease of oxygen flow rate in the gas mixture increased the SiO X-thin-film deposition rate. The improvement of the mechanical properties for SiO X film, in addition to the increase of deposition rate, is believed to be related not only to the higher gas dissociation because of the higher power deposition but also to the lesser recombination of oxygen atoms and dissociated HMDS due to the shorter diffusion length to the substrate.
KW - A. Inorganic compounds
KW - A. Oxides
KW - B. Plasma deposition
KW - D. Mechanical properties
UR - https://www.scopus.com/pages/publications/84866339599
U2 - 10.1016/j.materresbull.2012.04.124
DO - 10.1016/j.materresbull.2012.04.124
M3 - Article
AN - SCOPUS:84866339599
SN - 0025-5408
VL - 47
SP - 3011
EP - 3014
JO - Materials Research Bulletin
JF - Materials Research Bulletin
IS - 10
ER -