Characteristics of pentacene with different polymer gate insulators for organic thin-film transistors

  • Jung Min Kim
  • , Hyun Jung Her
  • , J. H. Yoon
  • , Jaewan Kim
  • , Y. J. Choi
  • , C. J. Kang
  • , D. Jeon
  • , Yong Sang Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigated the characteristics of pentacene thin films of different materials for gate insulators using atomic force microscope (AFM) and x-ray diffraction (XRD). The pentacene thin films are fabricated by evaporation on different polymer substrates. We used HMDS (Hexa Methyl Di Silazane), PVA (Poly Vinyl Alcohol) and PMMA (Poly Methyl Meth Acrylate) for the polymer substrates, on which pentacene is deposited at various substrate temperatures. The case of pentacene deposited on the PMMA has the largest grain size and least trap concentration. We also fabricated pentacene TFTs with the PMMA gate insulator. Pentacene TFTs with PMMA gate insulator, shows high field-effect mobility (u FET= 0.03 cm2/Vs) and large on/off current ratio (>105) and small threshold voltage (Vth= -6 V).

Original languageEnglish
Title of host publicationAdvances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
PublisherTrans Tech Publications Ltd
Pages451-454
Number of pages4
EditionPART 1
ISBN (Print)3908451310, 9783908451310
DOIs
StatePublished - 2007
Externally publishedYes
EventIUMRS International Conference in Asia 2006, IUMRS-ICA 2006 - Jeju, Korea, Republic of
Duration: 10 Sep 200614 Sep 2006

Publication series

NameSolid State Phenomena
NumberPART 1
Volume124-126
ISSN (Print)1012-0394

Conference

ConferenceIUMRS International Conference in Asia 2006, IUMRS-ICA 2006
Country/TerritoryKorea, Republic of
CityJeju
Period10/09/0614/09/06

Keywords

  • Organic thin-film transistors
  • Pentacene
  • Polymer gate insulators

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