Characteristics of high-k gate oxides prepared by oxidation of 1.4 nm multi-layered Hf/Al metal film

J. S. Kim; H. J. Lee; K. S. Kim; J. E. Lee; Y. Roh; Y. S. Jung; C. W. Yang

doi:10.1016/j.tsf.2005.12.286

Characteristics of high-k gate oxides prepared by oxidation of 1.4 nm multi-layered Hf/Al metal film

J. S. Kim
, H. J. Lee
, K. S. Kim
, J. E. Lee
, Y. Roh
, Y. S. Jung
, C. W. Yang

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the physical and electrical properties of high-k gate oxide formed by oxidizing multi-layered Hf and Al metal films. We demonstrated that oxidation of multi-layered metal films results in two distinctive amorphous layers: That is, Hf- and Al-doped metal oxide films were formed on the top of silicate film. The thickness of silicate layer and therefore equivalent oxide thickness (EOT) value were dependent on the number of metal films. To reduce the EOT value, higher number of metal layers is desirable. In addition, annealing has to be done at 600 °C to obtain the minimum value of EOT. Hysteresis phenomenon usually observed in high-k oxide was not observed in this work.

Original language	English
Pages (from-to)	517-521
Number of pages	5
Journal	Thin Solid Films
Volume	515
Issue number	2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2005.12.286
State	Published - 25 Oct 2006

Keywords

AlO
High-k gate oxide
MOS
Silicate film

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10.1016/j.tsf.2005.12.286

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title = "Characteristics of high-k gate oxides prepared by oxidation of 1.4 nm multi-layered Hf/Al metal film",

abstract = "We investigated the physical and electrical properties of high-k gate oxide formed by oxidizing multi-layered Hf and Al metal films. We demonstrated that oxidation of multi-layered metal films results in two distinctive amorphous layers: That is, Hf- and Al-doped metal oxide films were formed on the top of silicate film. The thickness of silicate layer and therefore equivalent oxide thickness (EOT) value were dependent on the number of metal films. To reduce the EOT value, higher number of metal layers is desirable. In addition, annealing has to be done at 600 °C to obtain the minimum value of EOT. Hysteresis phenomenon usually observed in high-k oxide was not observed in this work.",

keywords = "AlO, High-k gate oxide, MOS, Silicate film",

author = "Kim, \{J. S.\} and Lee, \{H. J.\} and Kim, \{K. S.\} and Lee, \{J. E.\} and Y. Roh and Jung, \{Y. S.\} and Yang, \{C. W.\}",

year = "2006",

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doi = "10.1016/j.tsf.2005.12.286",

language = "English",

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TY - JOUR

T1 - Characteristics of high-k gate oxides prepared by oxidation of 1.4 nm multi-layered Hf/Al metal film

AU - Kim, J. S.

AU - Lee, H. J.

AU - Kim, K. S.

AU - Lee, J. E.

AU - Roh, Y.

AU - Jung, Y. S.

AU - Yang, C. W.

PY - 2006/10/25

Y1 - 2006/10/25

N2 - We investigated the physical and electrical properties of high-k gate oxide formed by oxidizing multi-layered Hf and Al metal films. We demonstrated that oxidation of multi-layered metal films results in two distinctive amorphous layers: That is, Hf- and Al-doped metal oxide films were formed on the top of silicate film. The thickness of silicate layer and therefore equivalent oxide thickness (EOT) value were dependent on the number of metal films. To reduce the EOT value, higher number of metal layers is desirable. In addition, annealing has to be done at 600 °C to obtain the minimum value of EOT. Hysteresis phenomenon usually observed in high-k oxide was not observed in this work.

AB - We investigated the physical and electrical properties of high-k gate oxide formed by oxidizing multi-layered Hf and Al metal films. We demonstrated that oxidation of multi-layered metal films results in two distinctive amorphous layers: That is, Hf- and Al-doped metal oxide films were formed on the top of silicate film. The thickness of silicate layer and therefore equivalent oxide thickness (EOT) value were dependent on the number of metal films. To reduce the EOT value, higher number of metal layers is desirable. In addition, annealing has to be done at 600 °C to obtain the minimum value of EOT. Hysteresis phenomenon usually observed in high-k oxide was not observed in this work.

KW - AlO

KW - High-k gate oxide

KW - MOS

KW - Silicate film

UR - https://www.scopus.com/pages/publications/33748741547

U2 - 10.1016/j.tsf.2005.12.286

DO - 10.1016/j.tsf.2005.12.286

M3 - Article

AN - SCOPUS:33748741547

SN - 0040-6090

VL - 515

SP - 517

EP - 521

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2 SPEC. ISS.

ER -

Characteristics of high-k gate oxides prepared by oxidation of 1.4 nm multi-layered Hf/Al metal film

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Keywords

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