Skip to main navigation Skip to search Skip to main content

Characteristics of HfO2/HfSixOy film as an alternative gate dielectric in metal-oxide-semiconductor devices

  • Sungkyunkwan University

Research output: Contribution to journal › Conference article › peer-review

32   Link opens in a new tab Scopus citations

Fingerprint

Dive into the research topics of 'Characteristics of HfO2/HfSixOy film as an alternative gate dielectric in metal-oxide-semiconductor devices'. Together they form a unique fingerprint.
Sort by

Material Science