Characteristics of HfO2/HfSixOy film as an alternative gate dielectric in metal-oxide-semiconductor devices

Hyeoksu Kang; Yonghan Roh; Geunhag Bae; Donggeun Jung; Cheol Woong Yang

doi:10.1116/1.1490383

Characteristics of HfO₂/HfSi_xO_y film as an alternative gate dielectric in metal-oxide-semiconductor devices

Hyeoksu Kang
, Yonghan Roh
, Geunhag Bae
, Donggeun Jung
, Cheol Woong Yang

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Conference article › peer-review

32 Scopus citations

Abstract

The structural and electrical properties of the HfO₂/HfSi_xO_y thin films prepared by the oxidation of Hf on the Si substrate were studied. An electrically stable amorphous HfSi_xO_y layer was formed between HfO₂ and Si by the oxidation of the Hf metal films. However, the oxide capacitance value was lowered by the formation of this layer. Both as-oxidized and N₂ annealed samples demonstrated the excellent electrical characteristics. The EOT and the leakage current density of Pd-HfO₂/HfSi_xO_y-Si capacitor were 1.4 nm and 5 × 10^-3 A/cm² at 2 V after compensating the flatband voltage of 1 V.

Original language	English
Pages (from-to)	1360-1363
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1490383
State	Published - Jul 2002
Event	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States Duration: 6 Jan 2002 → 10 Jan 2002

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title = "Characteristics of HfO2/HfSixOy film as an alternative gate dielectric in metal-oxide-semiconductor devices",

abstract = "The structural and electrical properties of the HfO2/HfSixOy thin films prepared by the oxidation of Hf on the Si substrate were studied. An electrically stable amorphous HfSixOy layer was formed between HfO2 and Si by the oxidation of the Hf metal films. However, the oxide capacitance value was lowered by the formation of this layer. Both as-oxidized and N2 annealed samples demonstrated the excellent electrical characteristics. The EOT and the leakage current density of Pd-HfO2/HfSixOy-Si capacitor were 1.4 nm and 5 × 10-3 A/cm2 at 2 V after compensating the flatband voltage of 1 V.",

author = "Hyeoksu Kang and Yonghan Roh and Geunhag Bae and Donggeun Jung and Yang, \{Cheol Woong\}",

year = "2002",

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issn = "1071-1023",

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T1 - Characteristics of HfO2/HfSixOy film as an alternative gate dielectric in metal-oxide-semiconductor devices

AU - Kang, Hyeoksu

AU - Roh, Yonghan

AU - Bae, Geunhag

AU - Jung, Donggeun

AU - Yang, Cheol Woong

PY - 2002/7

Y1 - 2002/7

N2 - The structural and electrical properties of the HfO2/HfSixOy thin films prepared by the oxidation of Hf on the Si substrate were studied. An electrically stable amorphous HfSixOy layer was formed between HfO2 and Si by the oxidation of the Hf metal films. However, the oxide capacitance value was lowered by the formation of this layer. Both as-oxidized and N2 annealed samples demonstrated the excellent electrical characteristics. The EOT and the leakage current density of Pd-HfO2/HfSixOy-Si capacitor were 1.4 nm and 5 × 10-3 A/cm2 at 2 V after compensating the flatband voltage of 1 V.

AB - The structural and electrical properties of the HfO2/HfSixOy thin films prepared by the oxidation of Hf on the Si substrate were studied. An electrically stable amorphous HfSixOy layer was formed between HfO2 and Si by the oxidation of the Hf metal films. However, the oxide capacitance value was lowered by the formation of this layer. Both as-oxidized and N2 annealed samples demonstrated the excellent electrical characteristics. The EOT and the leakage current density of Pd-HfO2/HfSixOy-Si capacitor were 1.4 nm and 5 × 10-3 A/cm2 at 2 V after compensating the flatband voltage of 1 V.

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DO - 10.1116/1.1490383

M3 - Conference article

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SN - 1071-1023

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

T2 - Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces

Y2 - 6 January 2002 through 10 January 2002

ER -

Characteristics of HfO₂/HfSi_xO_y film as an alternative gate dielectric in metal-oxide-semiconductor devices

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