Characteristics of copper diffusion into low dielectric constant plasma polymerized cyclohexane thin films

Cheonman Shim; Jayoung Choi; Donggeun Jung; Nae Eung Lee; Cheol Woong Yang

doi:10.1143/jjap.39.l1327

Characteristics of copper diffusion into low dielectric constant plasma polymerized cyclohexane thin films

Cheonman Shim, Jayoung Choi, Donggeun Jung, Nae Eung Lee, Cheol Woong Yang

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Copper (Cu) diffusion into low dielectric constant plasma polymerized cyclohexane (PPCHex) thin films deposited by plasma enhanced chemical vapor deposition upon annealing was investigated. Cu diffusion was analyzed by current-voltage (I-V) measurement, Rutherford backscattering spectroscopy (RBS), and transmission electron microscopy (TEM). From I-V measurement and TEM analysis, it was revealed that PPCHex thin films were resistant to Cu diffusion up to 400 °C, while there was a notable amount of Cu diffused into the PPCHex thin films after 450 °C annealing. RBS was not sensitive enough to detect a small amount of Cu diffused into the PPCHex films. Improved Cu diffusion resistance of our PPCHex thin films compared to thin films of chemically synthesized polymers is thought to be due to high cross-linking among film-forming species of plasma polymers.

Original language	English
Pages (from-to)	L1327-L1329
Journal	Japanese Journal of Applied Physics
Volume	39
Issue number	12 B
DOIs	https://doi.org/10.1143/jjap.39.l1327
State	Published - 2000

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@article{3bb80f9e2d194609bc74fff3e338974f,

title = "Characteristics of copper diffusion into low dielectric constant plasma polymerized cyclohexane thin films",

abstract = "Copper (Cu) diffusion into low dielectric constant plasma polymerized cyclohexane (PPCHex) thin films deposited by plasma enhanced chemical vapor deposition upon annealing was investigated. Cu diffusion was analyzed by current-voltage (I-V) measurement, Rutherford backscattering spectroscopy (RBS), and transmission electron microscopy (TEM). From I-V measurement and TEM analysis, it was revealed that PPCHex thin films were resistant to Cu diffusion up to 400 °C, while there was a notable amount of Cu diffused into the PPCHex thin films after 450 °C annealing. RBS was not sensitive enough to detect a small amount of Cu diffused into the PPCHex films. Improved Cu diffusion resistance of our PPCHex thin films compared to thin films of chemically synthesized polymers is thought to be due to high cross-linking among film-forming species of plasma polymers.",

author = "Cheonman Shim and Jayoung Choi and Donggeun Jung and Lee, \{Nae Eung\} and Yang, \{Cheol Woong\}",

year = "2000",

doi = "10.1143/jjap.39.l1327",

language = "English",

volume = "39",

pages = "L1327--L1329",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "12 B",

}

TY - JOUR

T1 - Characteristics of copper diffusion into low dielectric constant plasma polymerized cyclohexane thin films

AU - Shim, Cheonman

AU - Choi, Jayoung

AU - Jung, Donggeun

AU - Lee, Nae Eung

AU - Yang, Cheol Woong

PY - 2000

Y1 - 2000

N2 - Copper (Cu) diffusion into low dielectric constant plasma polymerized cyclohexane (PPCHex) thin films deposited by plasma enhanced chemical vapor deposition upon annealing was investigated. Cu diffusion was analyzed by current-voltage (I-V) measurement, Rutherford backscattering spectroscopy (RBS), and transmission electron microscopy (TEM). From I-V measurement and TEM analysis, it was revealed that PPCHex thin films were resistant to Cu diffusion up to 400 °C, while there was a notable amount of Cu diffused into the PPCHex thin films after 450 °C annealing. RBS was not sensitive enough to detect a small amount of Cu diffused into the PPCHex films. Improved Cu diffusion resistance of our PPCHex thin films compared to thin films of chemically synthesized polymers is thought to be due to high cross-linking among film-forming species of plasma polymers.

AB - Copper (Cu) diffusion into low dielectric constant plasma polymerized cyclohexane (PPCHex) thin films deposited by plasma enhanced chemical vapor deposition upon annealing was investigated. Cu diffusion was analyzed by current-voltage (I-V) measurement, Rutherford backscattering spectroscopy (RBS), and transmission electron microscopy (TEM). From I-V measurement and TEM analysis, it was revealed that PPCHex thin films were resistant to Cu diffusion up to 400 °C, while there was a notable amount of Cu diffused into the PPCHex thin films after 450 °C annealing. RBS was not sensitive enough to detect a small amount of Cu diffused into the PPCHex films. Improved Cu diffusion resistance of our PPCHex thin films compared to thin films of chemically synthesized polymers is thought to be due to high cross-linking among film-forming species of plasma polymers.

UR - https://www.scopus.com/pages/publications/0034470753

U2 - 10.1143/jjap.39.l1327

DO - 10.1143/jjap.39.l1327

M3 - Article

AN - SCOPUS:0034470753

SN - 0021-4922

VL - 39

SP - L1327-L1329

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12 B

ER -

Characteristics of copper diffusion into low dielectric constant plasma polymerized cyclohexane thin films

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