Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam

Sung Woo Kim; Byoung Jae Park; Se Koo Kang; Bo Hyun Kong; Hyung Koun Cho; Geun Young Yeom; Sungho Heo; Hyunsang Hwang

doi:10.1063/1.2975183

Characteristics of Al₂O₃ gate dielectrics partially fluorinated by a low energy fluorine beam

Sung Woo Kim
, Byoung Jae Park
, Se Koo Kang
, Bo Hyun Kong
, Hyung Koun Cho
, Geun Young Yeom
, Sungho Heo
, Hyunsang Hwang

Department of Advanced Materials Science and Engineering

Sungkyunkwan University
Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The partial fluorination of Al₂O₃ gate dielectrics was examined by exposing an oxide-nitride-aluminum oxide (ONA) stack to a low energy fluorine beam, and its effect on the properties of the ONA was investigated. Exposing ONA to about 10 eV fluorine beam resulted in a 5-nm-thick AlO_xF_y layer on the ONA by replacing some Al-O to Al-F. The electrical properties such as leakage current and memory window characteristics were improved after fluorination of the ONA, possibly due to the improved charge trapping characteristics through the formation of an AlO _xF_y layer on the Al₂O₃ without changing the blocking layer thickness.

Original language	English
Article number	191506
Journal	Applied Physics Letters
Volume	93
Issue number	19
DOIs	https://doi.org/10.1063/1.2975183
State	Published - 2008

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title = "Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam",

abstract = "The partial fluorination of Al2O3 gate dielectrics was examined by exposing an oxide-nitride-aluminum oxide (ONA) stack to a low energy fluorine beam, and its effect on the properties of the ONA was investigated. Exposing ONA to about 10 eV fluorine beam resulted in a 5-nm-thick AlOxFy layer on the ONA by replacing some Al-O to Al-F. The electrical properties such as leakage current and memory window characteristics were improved after fluorination of the ONA, possibly due to the improved charge trapping characteristics through the formation of an AlO xFy layer on the Al2O3 without changing the blocking layer thickness.",

author = "Kim, \{Sung Woo\} and Park, \{Byoung Jae\} and Kang, \{Se Koo\} and Kong, \{Bo Hyun\} and Cho, \{Hyung Koun\} and Yeom, \{Geun Young\} and Sungho Heo and Hyunsang Hwang",

year = "2008",

doi = "10.1063/1.2975183",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam

AU - Kim, Sung Woo

AU - Park, Byoung Jae

AU - Kang, Se Koo

AU - Kong, Bo Hyun

AU - Cho, Hyung Koun

AU - Yeom, Geun Young

AU - Heo, Sungho

AU - Hwang, Hyunsang

PY - 2008

Y1 - 2008

N2 - The partial fluorination of Al2O3 gate dielectrics was examined by exposing an oxide-nitride-aluminum oxide (ONA) stack to a low energy fluorine beam, and its effect on the properties of the ONA was investigated. Exposing ONA to about 10 eV fluorine beam resulted in a 5-nm-thick AlOxFy layer on the ONA by replacing some Al-O to Al-F. The electrical properties such as leakage current and memory window characteristics were improved after fluorination of the ONA, possibly due to the improved charge trapping characteristics through the formation of an AlO xFy layer on the Al2O3 without changing the blocking layer thickness.

AB - The partial fluorination of Al2O3 gate dielectrics was examined by exposing an oxide-nitride-aluminum oxide (ONA) stack to a low energy fluorine beam, and its effect on the properties of the ONA was investigated. Exposing ONA to about 10 eV fluorine beam resulted in a 5-nm-thick AlOxFy layer on the ONA by replacing some Al-O to Al-F. The electrical properties such as leakage current and memory window characteristics were improved after fluorination of the ONA, possibly due to the improved charge trapping characteristics through the formation of an AlO xFy layer on the Al2O3 without changing the blocking layer thickness.

UR - https://www.scopus.com/pages/publications/56249113778

U2 - 10.1063/1.2975183

DO - 10.1063/1.2975183

M3 - Article

AN - SCOPUS:56249113778

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 191506

ER -

Characteristics of Al₂O₃ gate dielectrics partially fluorinated by a low energy fluorine beam

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