Characteristics of a multilayer SiOx(CH)yN z film deposited by low temperature plasma enhanced chemical vapor deposition using hexamethyldisilazane/Ar/N2O

June Hee Lee; Chang Hyun Jeong; Jong Tae Lim; Viktor A. Zavaleyev; Se Jin Kyung; Geun Young Yeom

doi:10.1143/JJAP.45.8430

Characteristics of a multilayer SiO_x(CH)_yN _z film deposited by low temperature plasma enhanced chemical vapor deposition using hexamethyldisilazane/Ar/N₂O

June Hee Lee
, Chang Hyun Jeong
, Jong Tae Lim
, Viktor A. Zavaleyev
, Se Jin Kyung
, Geun Young Yeom

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

SiO_x(CH)_yN_z films were deposited at room temperature using plasma enhanced chemical vapor deposition (PECVD) with a gas mixture of hexamethyldisilazane [HMDS, Si₂NH(CH₃) ₆]/Ar/N₂O. The characteristics of those films with increasing N₂O were investigated. When no N₂O was used, the film showed organic characteristics with a Si/O composition ratio of 2 and a large concentration of -CH_x and N-H in the deposited film. However, with increasing N₂O flow rate, oxygen-rich and transparent SiO ₂-like inorganic thin films could be obtained with a Si/O composition ratio of 0.5 and a lower -CH_x and N-H in the deposited film. By turning on-and-off the N₂O gas flow during SiO_x(CH) _yN_z deposition, a multi-layer thin film consisting of an organic Si(CH)_x-like film/inorganic SiO₂-like thin film, which can be applied to the thin film passivation for organic devices could be successfully deposited

Original language	English
Pages (from-to)	8430-8434
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	10 B
DOIs	https://doi.org/10.1143/JJAP.45.8430
State	Published - 21 Oct 2006

Keywords

Diffusion barrier
HMDS
NO
PECVD
SiO

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@article{34ec42db83a146a8a3d5fa00ee8dd2f5,

title = "Characteristics of a multilayer SiOx(CH)yN z film deposited by low temperature plasma enhanced chemical vapor deposition using hexamethyldisilazane/Ar/N2O",

abstract = "SiOx(CH)yNz films were deposited at room temperature using plasma enhanced chemical vapor deposition (PECVD) with a gas mixture of hexamethyldisilazane [HMDS, Si2NH(CH3) 6]/Ar/N2O. The characteristics of those films with increasing N2O were investigated. When no N2O was used, the film showed organic characteristics with a Si/O composition ratio of 2 and a large concentration of -CHx and N-H in the deposited film. However, with increasing N2O flow rate, oxygen-rich and transparent SiO 2-like inorganic thin films could be obtained with a Si/O composition ratio of 0.5 and a lower -CHx and N-H in the deposited film. By turning on-and-off the N2O gas flow during SiOx(CH) yNz deposition, a multi-layer thin film consisting of an organic Si(CH)x-like film/inorganic SiO2-like thin film, which can be applied to the thin film passivation for organic devices could be successfully deposited",

keywords = "Diffusion barrier, HMDS, NO, PECVD, SiO",

author = "Lee, \{June Hee\} and Jeong, \{Chang Hyun\} and Lim, \{Jong Tae\} and Zavaleyev, \{Viktor A.\} and Kyung, \{Se Jin\} and Yeom, \{Geun Young\}",

year = "2006",

month = oct,

day = "21",

doi = "10.1143/JJAP.45.8430",

language = "English",

volume = "45",

pages = "8430--8434",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "10 B",

}

TY - JOUR

T1 - Characteristics of a multilayer SiOx(CH)yN z film deposited by low temperature plasma enhanced chemical vapor deposition using hexamethyldisilazane/Ar/N2O

AU - Lee, June Hee

AU - Jeong, Chang Hyun

AU - Lim, Jong Tae

AU - Zavaleyev, Viktor A.

AU - Kyung, Se Jin

AU - Yeom, Geun Young

PY - 2006/10/21

Y1 - 2006/10/21

N2 - SiOx(CH)yNz films were deposited at room temperature using plasma enhanced chemical vapor deposition (PECVD) with a gas mixture of hexamethyldisilazane [HMDS, Si2NH(CH3) 6]/Ar/N2O. The characteristics of those films with increasing N2O were investigated. When no N2O was used, the film showed organic characteristics with a Si/O composition ratio of 2 and a large concentration of -CHx and N-H in the deposited film. However, with increasing N2O flow rate, oxygen-rich and transparent SiO 2-like inorganic thin films could be obtained with a Si/O composition ratio of 0.5 and a lower -CHx and N-H in the deposited film. By turning on-and-off the N2O gas flow during SiOx(CH) yNz deposition, a multi-layer thin film consisting of an organic Si(CH)x-like film/inorganic SiO2-like thin film, which can be applied to the thin film passivation for organic devices could be successfully deposited

AB - SiOx(CH)yNz films were deposited at room temperature using plasma enhanced chemical vapor deposition (PECVD) with a gas mixture of hexamethyldisilazane [HMDS, Si2NH(CH3) 6]/Ar/N2O. The characteristics of those films with increasing N2O were investigated. When no N2O was used, the film showed organic characteristics with a Si/O composition ratio of 2 and a large concentration of -CHx and N-H in the deposited film. However, with increasing N2O flow rate, oxygen-rich and transparent SiO 2-like inorganic thin films could be obtained with a Si/O composition ratio of 0.5 and a lower -CHx and N-H in the deposited film. By turning on-and-off the N2O gas flow during SiOx(CH) yNz deposition, a multi-layer thin film consisting of an organic Si(CH)x-like film/inorganic SiO2-like thin film, which can be applied to the thin film passivation for organic devices could be successfully deposited

KW - Diffusion barrier

KW - HMDS

KW - NO

KW - PECVD

KW - SiO

UR - https://www.scopus.com/pages/publications/34547896645

U2 - 10.1143/JJAP.45.8430

DO - 10.1143/JJAP.45.8430

M3 - Article

AN - SCOPUS:34547896645

SN - 0021-4922

VL - 45

SP - 8430

EP - 8434

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10 B

ER -

Characteristics of a multilayer SiO_x(CH)_yN _z film deposited by low temperature plasma enhanced chemical vapor deposition using hexamethyldisilazane/Ar/N₂O

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Keywords

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