Characteristic of carbon nanotubes synthesized by pin-to-plate type atmospheric pressure plasma enhanced chemical vapor deposition at low temperature

Yong Hyuk Lee; Se Jin Kyung; Chan Woo Kim; Geun Young Yeom

doi:10.1016/j.carbon.2005.10.039

Characteristic of carbon nanotubes synthesized by pin-to-plate type atmospheric pressure plasma enhanced chemical vapor deposition at low temperature

Yong Hyuk Lee
, Se Jin Kyung
, Chan Woo Kim
, Geun Young Yeom

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Letter › peer-review

3 Scopus citations

Abstract

Carbon nanotubes (CNT) were grown in He/C₂H₂/NH ₃ by atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) using a multi-pin-to-plate type discharge system at low temperature. FT-Raman data was also presented for the growth temperature of 450 and 500°C and for the NH₃ flow rate of 210 and 270 sccm. It showed the decrease of defective carbon (I_D)/graphite carbon (I_G to 0.772 with increasing substrate temperature and NH₃ showed the improved quality of grown CNT. The field emission field at 1 mA/cm² was 5.25 V/μm, when the field emission properties were measured for CNT at 500°C for 3 min.

Original language	English
Pages (from-to)	807-809
Number of pages	3
Journal	Carbon
Volume	44
Issue number	4
DOIs	https://doi.org/10.1016/j.carbon.2005.10.039
State	Published - Apr 2006

Keywords

Carbon nanotubes
Field emission
High pressure
Scanning electron microscopy

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10.1016/j.carbon.2005.10.039

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@article{2495a786c04743989fac30e7d4daee49,

title = "Characteristic of carbon nanotubes synthesized by pin-to-plate type atmospheric pressure plasma enhanced chemical vapor deposition at low temperature",

abstract = "Carbon nanotubes (CNT) were grown in He/C2H2/NH 3 by atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) using a multi-pin-to-plate type discharge system at low temperature. FT-Raman data was also presented for the growth temperature of 450 and 500°C and for the NH3 flow rate of 210 and 270 sccm. It showed the decrease of defective carbon (ID)/graphite carbon (IG to 0.772 with increasing substrate temperature and NH3 showed the improved quality of grown CNT. The field emission field at 1 mA/cm2 was 5.25 V/μm, when the field emission properties were measured for CNT at 500°C for 3 min.",

keywords = "Carbon nanotubes, Field emission, High pressure, Scanning electron microscopy",

author = "Lee, \{Yong Hyuk\} and Kyung, \{Se Jin\} and Kim, \{Chan Woo\} and Yeom, \{Geun Young\}",

year = "2006",

month = apr,

doi = "10.1016/j.carbon.2005.10.039",

language = "English",

volume = "44",

pages = "807--809",

journal = "Carbon",

issn = "0008-6223",

publisher = "Elsevier Ltd",

number = "4",

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TY - JOUR

T1 - Characteristic of carbon nanotubes synthesized by pin-to-plate type atmospheric pressure plasma enhanced chemical vapor deposition at low temperature

AU - Lee, Yong Hyuk

AU - Kyung, Se Jin

AU - Kim, Chan Woo

AU - Yeom, Geun Young

PY - 2006/4

Y1 - 2006/4

N2 - Carbon nanotubes (CNT) were grown in He/C2H2/NH 3 by atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) using a multi-pin-to-plate type discharge system at low temperature. FT-Raman data was also presented for the growth temperature of 450 and 500°C and for the NH3 flow rate of 210 and 270 sccm. It showed the decrease of defective carbon (ID)/graphite carbon (IG to 0.772 with increasing substrate temperature and NH3 showed the improved quality of grown CNT. The field emission field at 1 mA/cm2 was 5.25 V/μm, when the field emission properties were measured for CNT at 500°C for 3 min.

AB - Carbon nanotubes (CNT) were grown in He/C2H2/NH 3 by atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) using a multi-pin-to-plate type discharge system at low temperature. FT-Raman data was also presented for the growth temperature of 450 and 500°C and for the NH3 flow rate of 210 and 270 sccm. It showed the decrease of defective carbon (ID)/graphite carbon (IG to 0.772 with increasing substrate temperature and NH3 showed the improved quality of grown CNT. The field emission field at 1 mA/cm2 was 5.25 V/μm, when the field emission properties were measured for CNT at 500°C for 3 min.

KW - Carbon nanotubes

KW - Field emission

KW - High pressure

KW - Scanning electron microscopy

UR - https://www.scopus.com/pages/publications/29244477978

U2 - 10.1016/j.carbon.2005.10.039

DO - 10.1016/j.carbon.2005.10.039

M3 - Letter

AN - SCOPUS:29244477978

SN - 0008-6223

VL - 44

SP - 807

EP - 809

JO - Carbon

JF - Carbon

IS - 4

ER -

Characteristic of carbon nanotubes synthesized by pin-to-plate type atmospheric pressure plasma enhanced chemical vapor deposition at low temperature

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Keywords

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