Characterisation of 12CaO.7Al₂O₃ insulator and electride doped indium tin oxide thin films for oled applications

In this study, 12CaO.7Al₂O₃ (C12A7) insulator and electride doped indium tin oxide (ITO) (ITO:C12A7 insulator and electride) films were deposited on glass substrates by an radio frequency magnetron co-sputtering method with increasing number of C12A7 insulator and electride chips. The carrier concentration of both films was slightly decreased with increasing number of C12A7 insulator and electride chips to a minimum value of 7·8×10¹⁹ cm^-3. On the other hand, the resistivity of the films increased gradually with increasing number of C12A7 insulator and electride chips to maximum value of 8·1×10 ^-3 Ω cm for seven chips in the films. The decrease in carrier concentration and increase in resistivity can be related with the crystallinity of the films. The structural property and surface roughness of the films were examined and the change of grain size was strongly dependent on the decrease in crystallinity and surface roughness.