Channel strain evolution of recessed source/drain Si_1-xC _x structures by modifying scaling factors

We experimentally evaluated the effects of scaling on the channel strain in terms of scaling factors in recessed source/drain Si_1-xC_x structures. Epitaxial Si_1-xC_x films were deposited on recessed source/drain structures using a selective epitaxial growth process combined with reduced pressure chemical vapor deposition. Based on nano beam diffraction analyses and device simulation, it showed that the major transistor dimensions (gate length, source/ drain length, and the raised source/ drain height) influenced the channel strain: the channel strain increased with the gate length decreasing, and the raised height increasing, while declining with the reduction of the source/ drain length.