Abstract
Behaviors of Pd structures with different thicknesses supported by Ta 2O5/Ta in the reaction with oxygen and CO were studied by XPS and SEM. For the samples with a Pd thickness of 3 nm, a new low-binding-energy component appeared in the Pd 3d level upon O2 exposure at ∼200 °C and was reduced in intensity after a subsequent CO exposure at 150 and 200 °C. The change in the Ta 4f state could also be found upon oxygen and CO exposure, indicating that both Pd and the Ta-oxide substrate participate in the chemical reactions. For the sample with a higher Pd thickness, a positive shift in the Pd 3d level due to the oxidation of Pd was observed after exposure to O2 at a higher temperature (280 °C). A subsequent CO exposure at ∼150 °C could not reduce Pd-oxide layers, as confirmed by the unchanged Pd 3d spectra after CO treatment, i.e. Pd-oxide was not reactive for CO oxidation.
| Original language | English |
|---|---|
| Pages (from-to) | 1371-1376 |
| Number of pages | 6 |
| Journal | Surface and Interface Analysis |
| Volume | 43 |
| Issue number | 11 |
| DOIs | |
| State | Published - Nov 2011 |
Keywords
- CO oxidation
- metal
- oxidation
- X-ray Photoelectron Spectroscopy