TY - JOUR
T1 - Change of the trap energy levels of the atomic layer deposited HfLaO x films with different la concentration
AU - An, Chee Hong
AU - Lee, Myung Soo
AU - Choi, Ju Yun
AU - Kim, Hyoungsub
PY - 2009
Y1 - 2009
N2 - Ultrathin HfO2 and HfLaOx films with La/ (Hf+La) ratios of 42%, 57%, and 64% were synthesized with an atomic layer deposition process. By measuring the leakage current at different temperatures, the conduction mechanism of HfO2 and HfLaOx films was shown to follow the Poole-Frenkel emission model under a gate injection condition. Based on the temperature and field-dependence measurements, the intrinsic trap energy levels were found to be 1.42, 1.34, 1.03, and 0.98 eV for the HfLaOx samples with La/ (Hf+La) ratios of 0%, 42%, 57%, and 64%, respectively, showing a decreasing behavior as the La content increased.
AB - Ultrathin HfO2 and HfLaOx films with La/ (Hf+La) ratios of 42%, 57%, and 64% were synthesized with an atomic layer deposition process. By measuring the leakage current at different temperatures, the conduction mechanism of HfO2 and HfLaOx films was shown to follow the Poole-Frenkel emission model under a gate injection condition. Based on the temperature and field-dependence measurements, the intrinsic trap energy levels were found to be 1.42, 1.34, 1.03, and 0.98 eV for the HfLaOx samples with La/ (Hf+La) ratios of 0%, 42%, 57%, and 64%, respectively, showing a decreasing behavior as the La content increased.
UR - https://www.scopus.com/pages/publications/67649980015
U2 - 10.1063/1.3159625
DO - 10.1063/1.3159625
M3 - Article
AN - SCOPUS:67649980015
SN - 0003-6951
VL - 94
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 26
M1 - 262901
ER -