Abstract
In this study, Cd1−xZnxSySe1−y (0 ≤ x = y ≤ 0.35) photoelectrodes are deposited via inexpensive facile chemical bath deposition. The effects of Zn and S doping on the compositional, microstructural, electrical, and optical properties of thin films were analysed. The electrochemical photovoltaic (EPV) cell of configuration Cd1−xZnxSySe1−y/0.25M sulfide/polysulfide/C was assembled to examine the different performance parameters in light and in dark conditions. An EPV cell fabricated with the Cd1−xZnxSySe1−y (0 ≤ x = y ≤ 0.075) photoelectrode exhibited a maximum photoconversion efficiency of 3.18%. This performance can be attributed primarily to the enhanced light-absorption ability of the material because of the enhanced rough microstructure and low recombination of photo-injected electrons with the electrolyte. The photovoltaic (PV) performance is significantly enhanced after doping CdSe with Zn and S.
| Original language | English |
|---|---|
| Pages (from-to) | 3737-3748 |
| Number of pages | 12 |
| Journal | International Journal of Energy Research |
| Volume | 44 |
| Issue number | 5 |
| DOIs | |
| State | Published - 1 Apr 2020 |
Keywords
- chalcogenide semiconductors
- electrostatic force microscopy
- energy bandgap
- EPV cells
- Fermi level
- hall effect
- multinary materials
- thin film electrodes