Cd(Zn, S)Se quaternary thin films for electrochemical photovoltaic cell application

Ganesh T. Chavan, Vipul M. Prakshale, Shrishail S. Kamble, Santaji T. Pawar, Andrzej Sikora, Eun Chel Cho, Junsin Yi, Lalasaheb P. Deshmukh

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

In this study, Cd1−xZnxSySe1−y (0 ≤ x = y ≤ 0.35) photoelectrodes are deposited via inexpensive facile chemical bath deposition. The effects of Zn and S doping on the compositional, microstructural, electrical, and optical properties of thin films were analysed. The electrochemical photovoltaic (EPV) cell of configuration Cd1−xZnxSySe1−y/0.25M sulfide/polysulfide/C was assembled to examine the different performance parameters in light and in dark conditions. An EPV cell fabricated with the Cd1−xZnxSySe1−y (0 ≤ x = y ≤ 0.075) photoelectrode exhibited a maximum photoconversion efficiency of 3.18%. This performance can be attributed primarily to the enhanced light-absorption ability of the material because of the enhanced rough microstructure and low recombination of photo-injected electrons with the electrolyte. The photovoltaic (PV) performance is significantly enhanced after doping CdSe with Zn and S.

Original languageEnglish
Pages (from-to)3737-3748
Number of pages12
JournalInternational Journal of Energy Research
Volume44
Issue number5
DOIs
StatePublished - 1 Apr 2020

Keywords

  • chalcogenide semiconductors
  • electrostatic force microscopy
  • energy bandgap
  • EPV cells
  • Fermi level
  • hall effect
  • multinary materials
  • thin film electrodes

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