Cd(Zn, S)Se quaternary thin films for electrochemical photovoltaic cell application

  • Ganesh T. Chavan
  • , Vipul M. Prakshale
  • , Shrishail S. Kamble
  • , Santaji T. Pawar
  • , Andrzej Sikora
  • , Eun Chel Cho
  • , Junsin Yi
  • , Lalasaheb P. Deshmukh

Research output: Contribution to journalArticlepeer-review

Abstract

In this study, Cd1−xZnxSySe1−y (0 ≤ x = y ≤ 0.35) photoelectrodes are deposited via inexpensive facile chemical bath deposition. The effects of Zn and S doping on the compositional, microstructural, electrical, and optical properties of thin films were analysed. The electrochemical photovoltaic (EPV) cell of configuration Cd1−xZnxSySe1−y/0.25M sulfide/polysulfide/C was assembled to examine the different performance parameters in light and in dark conditions. An EPV cell fabricated with the Cd1−xZnxSySe1−y (0 ≤ x = y ≤ 0.075) photoelectrode exhibited a maximum photoconversion efficiency of 3.18%. This performance can be attributed primarily to the enhanced light-absorption ability of the material because of the enhanced rough microstructure and low recombination of photo-injected electrons with the electrolyte. The photovoltaic (PV) performance is significantly enhanced after doping CdSe with Zn and S.

Original languageEnglish
Pages (from-to)3737-3748
Number of pages12
JournalInternational Journal of Energy Research
Volume44
Issue number5
DOIs
StatePublished - 1 Apr 2020

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • chalcogenide semiconductors
  • electrostatic force microscopy
  • energy bandgap
  • EPV cells
  • Fermi level
  • hall effect
  • multinary materials
  • thin film electrodes

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