Carrier injection related stability of intrinsic hydrogenated amorphous silicon film and solar cells

In this paper, we report the stability of hydrogenated amorphous silicon (a-Si:H) thin films and solar cells for various carrier injections. The intrinsic films were prepared with different hydrogen dilutions. We observed that the a-Si:H film had a 25.4% decline in photocurrent due to the carrier injection. The photoluminescence peak within 1.1 to 1.7 eV increased towards the lower photon energy, due to the bias stress. The Urbach energyfor the film degraded from 59 to 85meV under a similar condition. We also observed a 24% drop in efficiency of the solar cell, due to a forward bias stress for 10 h.