Abstract
We calculate the low temperature resistivity in low-density two-dimensional hole gases in GaAs heterostructures by including screened charged impurity and phonon scattering in the theory. Our calculated resistance, which shows striking temperature-dependent nonmonotonicity arising from the competition among screening, nondegeneracy, and phonon effects, is in excellent agreement with recent experimental data.
| Original language | English |
|---|---|
| Pages (from-to) | R7838-R7841 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 61 |
| Issue number | 12 |
| DOIs | |
| State | Published - 2000 |
| Externally published | Yes |