Built-in voltages and asymmetric polarization switching in Pb(Zr,Ti)O3 thin film capacitors

J. Lee; C. H. Choi; B. H. Park; T. W. Noh; J. K. Lee

doi:10.1063/1.121610

Built-in voltages and asymmetric polarization switching in Pb(Zr,Ti)O₃ thin film capacitors

J. Lee, C. H. Choi, B. H. Park, T. W. Noh, J. K. Lee

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

112 Scopus citations

Abstract

Asymmetric polarization switching of Pb(Zr,Ti)O₃ (PZT) thin films with different electrode configuration has been studied in (La,Sr)CoO₃/Pb(Zr,Ti)O₃/(La,Sr)CoO₃ (LSCO) heterostructures in which the conducting oxide (La,Sr)CoO₃ and/or LaCoO₃ (LCO) have been used as an electrode. Polarization-voltage (P-V) hysteresis loop of LSCO/PZT/LSCO was symmetric. However, LCO/PZT/LSCO showed a largely asymmetric P-V hysteresis loop and large relaxation of the remanent polarization at the negatively poled state, eventually leading to an imprint failure. On the other hand, LSCO/PZT/LCO exhibited large relaxation of the positively poled state. The asymmetric behavior of the polarized states implies the presence of an internal electric field inside the PZT layer. It is suggested that the internal electric field is caused by built-in voltages at LCO/PZT and LSCO/PZT interfaces. The built-in voltages at LCO/PZT and LSCO/PZT interfaces were 0.6 V and 0.12 V, respectively.

Original language	English
Pages (from-to)	3380-3382
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	25
DOIs	https://doi.org/10.1063/1.121610
State	Published - 1998

Access to Document

10.1063/1.121610

Cite this

@article{5f731c52192743618e684ed288ced8d4,

title = "Built-in voltages and asymmetric polarization switching in Pb(Zr,Ti)O3 thin film capacitors",

abstract = "Asymmetric polarization switching of Pb(Zr,Ti)O3 (PZT) thin films with different electrode configuration has been studied in (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures in which the conducting oxide (La,Sr)CoO3 and/or LaCoO3 (LCO) have been used as an electrode. Polarization-voltage (P-V) hysteresis loop of LSCO/PZT/LSCO was symmetric. However, LCO/PZT/LSCO showed a largely asymmetric P-V hysteresis loop and large relaxation of the remanent polarization at the negatively poled state, eventually leading to an imprint failure. On the other hand, LSCO/PZT/LCO exhibited large relaxation of the positively poled state. The asymmetric behavior of the polarized states implies the presence of an internal electric field inside the PZT layer. It is suggested that the internal electric field is caused by built-in voltages at LCO/PZT and LSCO/PZT interfaces. The built-in voltages at LCO/PZT and LSCO/PZT interfaces were 0.6 V and 0.12 V, respectively.",

author = "J. Lee and Choi, \{C. H.\} and Park, \{B. H.\} and Noh, \{T. W.\} and Lee, \{J. K.\}",

year = "1998",

doi = "10.1063/1.121610",

language = "English",

volume = "72",

pages = "3380--3382",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Built-in voltages and asymmetric polarization switching in Pb(Zr,Ti)O3 thin film capacitors

AU - Lee, J.

AU - Choi, C. H.

AU - Park, B. H.

AU - Noh, T. W.

AU - Lee, J. K.

PY - 1998

Y1 - 1998

N2 - Asymmetric polarization switching of Pb(Zr,Ti)O3 (PZT) thin films with different electrode configuration has been studied in (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures in which the conducting oxide (La,Sr)CoO3 and/or LaCoO3 (LCO) have been used as an electrode. Polarization-voltage (P-V) hysteresis loop of LSCO/PZT/LSCO was symmetric. However, LCO/PZT/LSCO showed a largely asymmetric P-V hysteresis loop and large relaxation of the remanent polarization at the negatively poled state, eventually leading to an imprint failure. On the other hand, LSCO/PZT/LCO exhibited large relaxation of the positively poled state. The asymmetric behavior of the polarized states implies the presence of an internal electric field inside the PZT layer. It is suggested that the internal electric field is caused by built-in voltages at LCO/PZT and LSCO/PZT interfaces. The built-in voltages at LCO/PZT and LSCO/PZT interfaces were 0.6 V and 0.12 V, respectively.

AB - Asymmetric polarization switching of Pb(Zr,Ti)O3 (PZT) thin films with different electrode configuration has been studied in (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures in which the conducting oxide (La,Sr)CoO3 and/or LaCoO3 (LCO) have been used as an electrode. Polarization-voltage (P-V) hysteresis loop of LSCO/PZT/LSCO was symmetric. However, LCO/PZT/LSCO showed a largely asymmetric P-V hysteresis loop and large relaxation of the remanent polarization at the negatively poled state, eventually leading to an imprint failure. On the other hand, LSCO/PZT/LCO exhibited large relaxation of the positively poled state. The asymmetric behavior of the polarized states implies the presence of an internal electric field inside the PZT layer. It is suggested that the internal electric field is caused by built-in voltages at LCO/PZT and LSCO/PZT interfaces. The built-in voltages at LCO/PZT and LSCO/PZT interfaces were 0.6 V and 0.12 V, respectively.

UR - https://www.scopus.com/pages/publications/0000961110

U2 - 10.1063/1.121610

DO - 10.1063/1.121610

M3 - Article

AN - SCOPUS:0000961110

SN - 0003-6951

VL - 72

SP - 3380

EP - 3382

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Built-in voltages and asymmetric polarization switching in Pb(Zr,Ti)O₃ thin film capacitors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this