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Bright and efficient full-color colloidal quantum dot light-emitting diodes using an inverted device structure

  • Jeonghun Kwak
  • , Wan Ki Bae
  • , Donggu Lee
  • , Insun Park
  • , Jaehoon Lim
  • , Myeongjin Park
  • , Hyunduck Cho
  • , Heeje Woo
  • , Do Y. Yoon
  • , Kookheon Char
  • , Seonghoon Lee
  • , Changhee Lee
  • Dong-A University
  • Los Alamos National Laboratory
  • Seoul National University

Research output: Contribution to journalArticlepeer-review

Abstract

We report highly bright and efficient inverted structure quantum dot (QD) based light-emitting diodes (QLEDs) by using solution-processed ZnO nanoparticles as the electron injection/transport layer and by optimizing energy levels with the organic hole transport layer. We have successfully demonstrated highly bright red, green, and blue QLEDs showing maximum luminances up to 23 040, 218 800, and 2250 cd/m 2, and external quantum efficiencies of 7.3, 5.8, and 1.7%, respectively. It is also noticeable that they showed turn-on voltages as low as the bandgap energy of each QD and long operational lifetime, mainly attributed to the direct exciton recombination within QDs through the inverted device structure. These results signify a remarkable progress in QLEDs and offer a practicable platform for the realization of QD-based full-color displays and lightings.

Original languageEnglish
Pages (from-to)2362-2366
Number of pages5
JournalNano Letters
Volume12
Issue number5
DOIs
StatePublished - 9 May 2012
Externally publishedYes

Keywords

  • electroluminescence
  • inverted device structure
  • quantum dot light-emitting diodes
  • Quantum dots
  • zinc oxide nanoparticles

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