Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications

Cheolmin Park; Jungmo Kim; Gyeongbae Shim; Donghyun Oh; Minhan Jeon; Jiyoon Kang; Nagarajan Balaji; Shihyun Ahn; Junsin Yi

doi:10.1109/PVSC.2016.7750094

Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications

Cheolmin Park
, Jungmo Kim
, Gyeongbae Shim
, Donghyun Oh
, Minhan Jeon
, Jiyoon Kang
, Nagarajan Balaji
, Shihyun Ahn
, Junsin Yi

Department of Electronic and Electrical Engineering

Sungkyunkwan University
Busan Techno-park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, boron diffused layer optimization was described by metal impurity concentration control using gettering process. Boron diffusion was performed using BBr3 diffusion furnace with varying cooling rate and treated Rs with acid etching. The effect of gettering in the diffused layer was analyzed using SIMS and QSS-PC method, where by metal impurity and boron concentration and saturation current density (J0). Metal and boron retained dose was decreased from 2.04 × 10¹⁴ to 6.52 × 10¹³ atoms/cc, 1.2 × 10²⁰ to 3.54 × 10¹⁹ atoms/cc. Metal impurity and boron concentration determined SRV, MCLT, Jo. and solar cell output characteristics.

Original language	English
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2497-2499
Number of pages	3
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7750094
State	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1109/PVSC.2016.7750094

Cite this

Park, C., Kim, J., Shim, G., Oh, D., Jeon, M., Kang, J., Balaji, N., Ahn, S., & Yi, J. (2016). Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 2497-2499). Article 7750094 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750094

Park, Cheolmin ; Kim, Jungmo ; Shim, Gyeongbae et al. / Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 2497-2499 (Conference Record of the IEEE Photovoltaic Specialists Conference).

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title = "Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications",

abstract = "In this paper, boron diffused layer optimization was described by metal impurity concentration control using gettering process. Boron diffusion was performed using BBr3 diffusion furnace with varying cooling rate and treated Rs with acid etching. The effect of gettering in the diffused layer was analyzed using SIMS and QSS-PC method, where by metal impurity and boron concentration and saturation current density (J0). Metal and boron retained dose was decreased from 2.04 × 1014 to 6.52 × 1013 atoms/cc, 1.2 × 1020 to 3.54 × 1019 atoms/cc. Metal impurity and boron concentration determined SRV, MCLT, Jo. and solar cell output characteristics.",

author = "Cheolmin Park and Jungmo Kim and Gyeongbae Shim and Donghyun Oh and Minhan Jeon and Jiyoon Kang and Nagarajan Balaji and Shihyun Ahn and Junsin Yi",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

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doi = "10.1109/PVSC.2016.7750094",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

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Park, C, Kim, J, Shim, G, Oh, D, Jeon, M, Kang, J, Balaji, N, Ahn, S & Yi, J 2016, Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7750094, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 2497-2499, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16. https://doi.org/10.1109/PVSC.2016.7750094

Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications. / Park, Cheolmin; Kim, Jungmo; Shim, Gyeongbae et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 2497-2499 7750094 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Park, Cheolmin

AU - Kim, Jungmo

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AU - Jeon, Minhan

AU - Kang, Jiyoon

AU - Balaji, Nagarajan

AU - Ahn, Shihyun

AU - Yi, Junsin

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N2 - In this paper, boron diffused layer optimization was described by metal impurity concentration control using gettering process. Boron diffusion was performed using BBr3 diffusion furnace with varying cooling rate and treated Rs with acid etching. The effect of gettering in the diffused layer was analyzed using SIMS and QSS-PC method, where by metal impurity and boron concentration and saturation current density (J0). Metal and boron retained dose was decreased from 2.04 × 1014 to 6.52 × 1013 atoms/cc, 1.2 × 1020 to 3.54 × 1019 atoms/cc. Metal impurity and boron concentration determined SRV, MCLT, Jo. and solar cell output characteristics.

AB - In this paper, boron diffused layer optimization was described by metal impurity concentration control using gettering process. Boron diffusion was performed using BBr3 diffusion furnace with varying cooling rate and treated Rs with acid etching. The effect of gettering in the diffused layer was analyzed using SIMS and QSS-PC method, where by metal impurity and boron concentration and saturation current density (J0). Metal and boron retained dose was decreased from 2.04 × 1014 to 6.52 × 1013 atoms/cc, 1.2 × 1020 to 3.54 × 1019 atoms/cc. Metal impurity and boron concentration determined SRV, MCLT, Jo. and solar cell output characteristics.

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Park C, Kim J, Shim G, Oh D, Jeon M, Kang J et al. Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 2497-2499. 7750094. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2016.7750094

Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications

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