Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications

Cheolmin Park; Jungmo Kim; Gyeongbae Shim; Donghyun Oh; Minhan Jeon; Jiyoon Kang; Nagarajan Balaji; Shihyun Ahn; Junsin Yi

doi:10.1109/PVSC.2017.8366578

Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications

Cheolmin Park
, Jungmo Kim
, Gyeongbae Shim
, Donghyun Oh
, Minhan Jeon
, Jiyoon Kang
, Nagarajan Balaji
, Shihyun Ahn
, Junsin Yi

Department of Electronic and Electrical Engineering

Sungkyunkwan University
Busan Techno-park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, boron diffused layer optimization was described by metal impurity concentration control using gettering process. Boron diffusion was performed using BBr3 diffusion furnace with varying cooling rate and treated Rs with acid etching. The effect of gettering in the diffused layer was analyzed using SIMS and QSS-PC method, where by metal impurity and boron concentration and saturation current density (J0). Metal and boron retained dose was decreased from 2.04 × 10¹⁴ to 6.52 × 10¹³ atoms/cc, 1.2 × 10²⁰ to 3.54 × 10¹⁹ atoms/cc. Metal impurity and boron concentration determined SRV, MCLT, J0.and solar cell output characteristics.

Original language	English
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1648-1650
Number of pages	3
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366578
State	Published - 2017
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017

Publication series

Name	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Conference

Conference	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	25/06/17 → 30/06/17

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1109/PVSC.2017.8366578

Cite this

Park, C., Kim, J., Shim, G., Oh, D., Jeon, M., Kang, J., Balaji, N., Ahn, S., & Yi, J. (2017). Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1648-1650). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366578

Park, Cheolmin ; Kim, Jungmo ; Shim, Gyeongbae et al. / Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1648-1650 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

@inproceedings{c95ac78630e14deab540e50795497842,

title = "Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications",

abstract = "In this paper, boron diffused layer optimization was described by metal impurity concentration control using gettering process. Boron diffusion was performed using BBr3 diffusion furnace with varying cooling rate and treated Rs with acid etching. The effect of gettering in the diffused layer was analyzed using SIMS and QSS-PC method, where by metal impurity and boron concentration and saturation current density (J0). Metal and boron retained dose was decreased from 2.04 × 1014 to 6.52 × 1013 atoms/cc, 1.2 × 1020 to 3.54 × 1019 atoms/cc. Metal impurity and boron concentration determined SRV, MCLT, J0.and solar cell output characteristics.",

author = "Cheolmin Park and Jungmo Kim and Gyeongbae Shim and Donghyun Oh and Minhan Jeon and Jiyoon Kang and Nagarajan Balaji and Shihyun Ahn and Junsin Yi",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

doi = "10.1109/PVSC.2017.8366578",

language = "English",

series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1648--1650",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

}

Park, C, Kim, J, Shim, G, Oh, D, Jeon, M, Kang, J, Balaji, N, Ahn, S & Yi, J 2017, Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 1648-1650, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 25/06/17. https://doi.org/10.1109/PVSC.2017.8366578

Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications. / Park, Cheolmin; Kim, Jungmo; Shim, Gyeongbae et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1648-1650 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications

AU - Park, Cheolmin

AU - Kim, Jungmo

AU - Shim, Gyeongbae

AU - Oh, Donghyun

AU - Jeon, Minhan

AU - Kang, Jiyoon

AU - Balaji, Nagarajan

AU - Ahn, Shihyun

AU - Yi, Junsin

PY - 2017

Y1 - 2017

N2 - In this paper, boron diffused layer optimization was described by metal impurity concentration control using gettering process. Boron diffusion was performed using BBr3 diffusion furnace with varying cooling rate and treated Rs with acid etching. The effect of gettering in the diffused layer was analyzed using SIMS and QSS-PC method, where by metal impurity and boron concentration and saturation current density (J0). Metal and boron retained dose was decreased from 2.04 × 1014 to 6.52 × 1013 atoms/cc, 1.2 × 1020 to 3.54 × 1019 atoms/cc. Metal impurity and boron concentration determined SRV, MCLT, J0.and solar cell output characteristics.

AB - In this paper, boron diffused layer optimization was described by metal impurity concentration control using gettering process. Boron diffusion was performed using BBr3 diffusion furnace with varying cooling rate and treated Rs with acid etching. The effect of gettering in the diffused layer was analyzed using SIMS and QSS-PC method, where by metal impurity and boron concentration and saturation current density (J0). Metal and boron retained dose was decreased from 2.04 × 1014 to 6.52 × 1013 atoms/cc, 1.2 × 1020 to 3.54 × 1019 atoms/cc. Metal impurity and boron concentration determined SRV, MCLT, J0.and solar cell output characteristics.

UR - https://www.scopus.com/pages/publications/85048471250

U2 - 10.1109/PVSC.2017.8366578

DO - 10.1109/PVSC.2017.8366578

M3 - Conference contribution

AN - SCOPUS:85048471250

T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

SP - 1648

EP - 1650

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

Y2 - 25 June 2017 through 30 June 2017

ER -

Park C, Kim J, Shim G, Oh D, Jeon M, Kang J et al. Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1648-1650. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). doi: 10.1109/PVSC.2017.8366578

Boron diffused layer optimization by metal impurity concentration control using gettering process for n-type c-Si solar cell applications

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