Boron carbide coating to improve the chemical stability of nm-thick graphite films

Tae Sung Kim; Jin Ho Yeo; Ki Bong Nam; Mun Ja Kim; Ji Beom Yoo

doi:10.1016/j.tsf.2020.138002

Boron carbide coating to improve the chemical stability of nm-thick graphite films

Tae Sung Kim, Jin Ho Yeo, Ki Bong Nam, Mun Ja Kim, Ji Beom Yoo

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Boron carbide is widely used as a coating material for wear resistance, neutron detection, and plasma facing in a tokamak nuclear reactor. We deposited boron carbide thin films on a Si substrate using magnetron sputtering at temperatures ranging from room temperature to 900 °C. When grown at temperatures higher than 700 °C, the boron carbide films showed significantly improved resistance to hydrogen plasma, comparable to that of highly oriented pyrolytic graphite. We investigated the origin of the improved hydrogen plasma resistance with X-ray diffraction, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy. As the increase of deposited temperature, boron carbide films showed an amorphous phase and increase of B-C bond ratio. We annealed the boron carbide film deposited at room temperature for crystallization at 1,000 °C and 1,050 °C in an Ar atmosphere. The annealed boron carbide films still remained in the amorphous phase.

Original language	English
Article number	138002
Journal	Thin Solid Films
Volume	704
DOIs	https://doi.org/10.1016/j.tsf.2020.138002
State	Published - 30 Jun 2020
Externally published	Yes

Keywords

Boron carbide
Extreme ultraviolet lithography
Extreme ultraviolet lithography pellicle
Hydrogen resistance
Pellicle

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10.1016/j.tsf.2020.138002

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title = "Boron carbide coating to improve the chemical stability of nm-thick graphite films",

abstract = "Boron carbide is widely used as a coating material for wear resistance, neutron detection, and plasma facing in a tokamak nuclear reactor. We deposited boron carbide thin films on a Si substrate using magnetron sputtering at temperatures ranging from room temperature to 900 °C. When grown at temperatures higher than 700 °C, the boron carbide films showed significantly improved resistance to hydrogen plasma, comparable to that of highly oriented pyrolytic graphite. We investigated the origin of the improved hydrogen plasma resistance with X-ray diffraction, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy. As the increase of deposited temperature, boron carbide films showed an amorphous phase and increase of B-C bond ratio. We annealed the boron carbide film deposited at room temperature for crystallization at 1,000 °C and 1,050 °C in an Ar atmosphere. The annealed boron carbide films still remained in the amorphous phase.",

keywords = "Boron carbide, Extreme ultraviolet lithography, Extreme ultraviolet lithography pellicle, Hydrogen resistance, Pellicle",

author = "Kim, \{Tae Sung\} and Yeo, \{Jin Ho\} and Nam, \{Ki Bong\} and Kim, \{Mun Ja\} and Yoo, \{Ji Beom\}",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = jun,

day = "30",

doi = "10.1016/j.tsf.2020.138002",

language = "English",

volume = "704",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Boron carbide coating to improve the chemical stability of nm-thick graphite films

AU - Kim, Tae Sung

AU - Yeo, Jin Ho

AU - Nam, Ki Bong

AU - Kim, Mun Ja

AU - Yoo, Ji Beom

PY - 2020/6/30

Y1 - 2020/6/30

N2 - Boron carbide is widely used as a coating material for wear resistance, neutron detection, and plasma facing in a tokamak nuclear reactor. We deposited boron carbide thin films on a Si substrate using magnetron sputtering at temperatures ranging from room temperature to 900 °C. When grown at temperatures higher than 700 °C, the boron carbide films showed significantly improved resistance to hydrogen plasma, comparable to that of highly oriented pyrolytic graphite. We investigated the origin of the improved hydrogen plasma resistance with X-ray diffraction, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy. As the increase of deposited temperature, boron carbide films showed an amorphous phase and increase of B-C bond ratio. We annealed the boron carbide film deposited at room temperature for crystallization at 1,000 °C and 1,050 °C in an Ar atmosphere. The annealed boron carbide films still remained in the amorphous phase.

AB - Boron carbide is widely used as a coating material for wear resistance, neutron detection, and plasma facing in a tokamak nuclear reactor. We deposited boron carbide thin films on a Si substrate using magnetron sputtering at temperatures ranging from room temperature to 900 °C. When grown at temperatures higher than 700 °C, the boron carbide films showed significantly improved resistance to hydrogen plasma, comparable to that of highly oriented pyrolytic graphite. We investigated the origin of the improved hydrogen plasma resistance with X-ray diffraction, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy. As the increase of deposited temperature, boron carbide films showed an amorphous phase and increase of B-C bond ratio. We annealed the boron carbide film deposited at room temperature for crystallization at 1,000 °C and 1,050 °C in an Ar atmosphere. The annealed boron carbide films still remained in the amorphous phase.

KW - Boron carbide

KW - Extreme ultraviolet lithography

KW - Extreme ultraviolet lithography pellicle

KW - Hydrogen resistance

KW - Pellicle

UR - https://www.scopus.com/pages/publications/85083691554

U2 - 10.1016/j.tsf.2020.138002

DO - 10.1016/j.tsf.2020.138002

M3 - Article

AN - SCOPUS:85083691554

SN - 0040-6090

VL - 704

JO - Thin Solid Films

JF - Thin Solid Films

M1 - 138002

ER -

Boron carbide coating to improve the chemical stability of nm-thick graphite films

Abstract

Keywords

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