Boosting the mobility and bias stability of oxide-based thin-film transistors with ultra-thin nanocrystalline InSnO:Zr layer

Jayapal Raja; Kyungsoo Jang; Shahzada Qamar Hussain; Nagarajan Balaji; Somenath Chatterjee; S. Velumani; Junsin Yi

doi:10.1063/1.4906159

Boosting the mobility and bias stability of oxide-based thin-film transistors with ultra-thin nanocrystalline InSnO:Zr layer

Jayapal Raja
, Kyungsoo Jang
, Shahzada Qamar Hussain
, Nagarajan Balaji
, Somenath Chatterjee
, S. Velumani
, Junsin Yi

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Extensive attention on high-definition flat panel displays is the driving force to fabricate high-performance thin-film transistors (TFTs). A hybrid oxide TFTs fabricated using an interfacial layer of nanocrystalline Zr-doped InSnO (nc-ITO:Zr) and an amorphous InSnZnO films as an active channel is reported here. Due to the presence of nc-ITO:Zr layer, an improvement of the field-effect mobility (86.4 cm²/V·s) and threshold voltage (0.43 V) values for TFTs are observed. Positive gate bias stress study indicates the role of nc-ITO:Zr layer in fabricated TFTs through the suppression of charge trapping capability between the channel and insulating layer.

Original language	English
Article number	033501
Journal	Applied Physics Letters
Volume	106
Issue number	3
DOIs	https://doi.org/10.1063/1.4906159
State	Published - 19 Jan 2015

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title = "Boosting the mobility and bias stability of oxide-based thin-film transistors with ultra-thin nanocrystalline InSnO:Zr layer",

abstract = "Extensive attention on high-definition flat panel displays is the driving force to fabricate high-performance thin-film transistors (TFTs). A hybrid oxide TFTs fabricated using an interfacial layer of nanocrystalline Zr-doped InSnO (nc-ITO:Zr) and an amorphous InSnZnO films as an active channel is reported here. Due to the presence of nc-ITO:Zr layer, an improvement of the field-effect mobility (86.4 cm2/V·s) and threshold voltage (0.43 V) values for TFTs are observed. Positive gate bias stress study indicates the role of nc-ITO:Zr layer in fabricated TFTs through the suppression of charge trapping capability between the channel and insulating layer.",

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AU - Raja, Jayapal

AU - Jang, Kyungsoo

AU - Hussain, Shahzada Qamar

AU - Balaji, Nagarajan

AU - Chatterjee, Somenath

AU - Velumani, S.

AU - Yi, Junsin

PY - 2015/1/19

Y1 - 2015/1/19

N2 - Extensive attention on high-definition flat panel displays is the driving force to fabricate high-performance thin-film transistors (TFTs). A hybrid oxide TFTs fabricated using an interfacial layer of nanocrystalline Zr-doped InSnO (nc-ITO:Zr) and an amorphous InSnZnO films as an active channel is reported here. Due to the presence of nc-ITO:Zr layer, an improvement of the field-effect mobility (86.4 cm2/V·s) and threshold voltage (0.43 V) values for TFTs are observed. Positive gate bias stress study indicates the role of nc-ITO:Zr layer in fabricated TFTs through the suppression of charge trapping capability between the channel and insulating layer.

AB - Extensive attention on high-definition flat panel displays is the driving force to fabricate high-performance thin-film transistors (TFTs). A hybrid oxide TFTs fabricated using an interfacial layer of nanocrystalline Zr-doped InSnO (nc-ITO:Zr) and an amorphous InSnZnO films as an active channel is reported here. Due to the presence of nc-ITO:Zr layer, an improvement of the field-effect mobility (86.4 cm2/V·s) and threshold voltage (0.43 V) values for TFTs are observed. Positive gate bias stress study indicates the role of nc-ITO:Zr layer in fabricated TFTs through the suppression of charge trapping capability between the channel and insulating layer.

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ER -

Boosting the mobility and bias stability of oxide-based thin-film transistors with ultra-thin nanocrystalline InSnO:Zr layer

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