Black photoresist bank for inkjet-printed quantum dot light-emitting diodes

Donghyun Ko; Jongseok Han; Heebum Roh; Yeseul Park; Jiwon Lee; Juho Kim; Hunsik Kim; Hyungjoo Kim; Jongsoo Lee; Wan Ki Bae; Changhee Lee

doi:10.1002/sdtp.12294

Black photoresist bank for inkjet-printed quantum dot light-emitting diodes

Donghyun Ko
, Jongseok Han
, Heebum Roh
, Yeseul Park
, Jiwon Lee
, Juho Kim
, Hunsik Kim
, Hyungjoo Kim
, Jongsoo Lee
, Wan Ki Bae
, Changhee Lee

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

We demonstrated a bank structure for inkjet-printed quantum dot light-emitting diodes (QLEDs) fabricated through photolithography process using black photoresist (B-PR). The B-PR banks have low surface energy (13 mJ m^-2), resulting in well confined quantum dot (QD) ink inside the pixel area. Based on the B-PR bank structure, we demonstrated a QLED with 0.20 % of external quantum efficiency.

Original language	English
Pages (from-to)	1629-1631
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	49
Issue number	1
DOIs	https://doi.org/10.1002/sdtp.12294
State	Published - 2018
Externally published	Yes
Event	SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States Duration: 20 May 2018 → 25 May 2018

Keywords

Black photoresist
Inkjet printing
Quantum dot light emitting diodes

Access to Document

10.1002/sdtp.12294

Cite this

@article{1e00e6dfb63d4743932627e168dc029f,

title = "Black photoresist bank for inkjet-printed quantum dot light-emitting diodes",

abstract = "We demonstrated a bank structure for inkjet-printed quantum dot light-emitting diodes (QLEDs) fabricated through photolithography process using black photoresist (B-PR). The B-PR banks have low surface energy (13 mJ m-2), resulting in well confined quantum dot (QD) ink inside the pixel area. Based on the B-PR bank structure, we demonstrated a QLED with 0.20 \% of external quantum efficiency.",

keywords = "Black photoresist, Inkjet printing, Quantum dot light emitting diodes",

author = "Donghyun Ko and Jongseok Han and Heebum Roh and Yeseul Park and Jiwon Lee and Juho Kim and Hunsik Kim and Hyungjoo Kim and Jongsoo Lee and Bae, \{Wan Ki\} and Changhee Lee",

note = "Publisher Copyright: {\textcopyright} 2018, Blackwell Publishing Ltd. All rights reserved.; SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 ; Conference date: 20-05-2018 Through 25-05-2018",

year = "2018",

doi = "10.1002/sdtp.12294",

language = "English",

volume = "49",

pages = "1629--1631",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

publisher = "John Wiley and Sons Inc",

number = "1",

}

TY - JOUR

T1 - Black photoresist bank for inkjet-printed quantum dot light-emitting diodes

AU - Ko, Donghyun

AU - Han, Jongseok

AU - Roh, Heebum

AU - Park, Yeseul

AU - Lee, Jiwon

AU - Kim, Juho

AU - Kim, Hunsik

AU - Kim, Hyungjoo

AU - Lee, Jongsoo

AU - Bae, Wan Ki

AU - Lee, Changhee

PY - 2018

Y1 - 2018

N2 - We demonstrated a bank structure for inkjet-printed quantum dot light-emitting diodes (QLEDs) fabricated through photolithography process using black photoresist (B-PR). The B-PR banks have low surface energy (13 mJ m-2), resulting in well confined quantum dot (QD) ink inside the pixel area. Based on the B-PR bank structure, we demonstrated a QLED with 0.20 % of external quantum efficiency.

AB - We demonstrated a bank structure for inkjet-printed quantum dot light-emitting diodes (QLEDs) fabricated through photolithography process using black photoresist (B-PR). The B-PR banks have low surface energy (13 mJ m-2), resulting in well confined quantum dot (QD) ink inside the pixel area. Based on the B-PR bank structure, we demonstrated a QLED with 0.20 % of external quantum efficiency.

KW - Black photoresist

KW - Inkjet printing

KW - Quantum dot light emitting diodes

UR - https://www.scopus.com/pages/publications/85054024756

U2 - 10.1002/sdtp.12294

DO - 10.1002/sdtp.12294

M3 - Conference article

AN - SCOPUS:85054024756

SN - 0097-966X

VL - 49

SP - 1629

EP - 1631

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - SID Symposium, Seminar, and Exhibition 2018, Display Week 2018

Y2 - 20 May 2018 through 25 May 2018

ER -

Black photoresist bank for inkjet-printed quantum dot light-emitting diodes

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this