Black phosphorus nonvolatile transistor memory

Dain Lee; Yongsuk Choi; Euyheon Hwang; Moon Sung Kang; Seungwoo Lee; Jeong Ho Cho

doi:10.1039/c6nr02078j

Black phosphorus nonvolatile transistor memory

Dain Lee
, Yongsuk Choi
, Euyheon Hwang
, Moon Sung Kang
, Seungwoo Lee
, Jeong Ho Cho

SKKU Advanced Institute of Nano Technology (SAINT)

Sungkyunkwan University
Soongsil University

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (10⁴ s), and cyclic endurance (1000 cycles).

Original language	English
Pages (from-to)	9107-9112
Number of pages	6
Journal	Nanoscale
Volume	8
Issue number	17
DOIs	https://doi.org/10.1039/c6nr02078j
State	Published - 7 May 2016

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title = "Black phosphorus nonvolatile transistor memory",

abstract = "We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (104 s), and cyclic endurance (1000 cycles).",

author = "Dain Lee and Yongsuk Choi and Euyheon Hwang and Kang, \{Moon Sung\} and Seungwoo Lee and Cho, \{Jeong Ho\}",

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year = "2016",

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doi = "10.1039/c6nr02078j",

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T1 - Black phosphorus nonvolatile transistor memory

AU - Lee, Dain

AU - Choi, Yongsuk

AU - Hwang, Euyheon

AU - Kang, Moon Sung

AU - Lee, Seungwoo

AU - Cho, Jeong Ho

PY - 2016/5/7

Y1 - 2016/5/7

N2 - We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (104 s), and cyclic endurance (1000 cycles).

AB - We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (104 s), and cyclic endurance (1000 cycles).

UR - https://www.scopus.com/pages/publications/84973304282

U2 - 10.1039/c6nr02078j

DO - 10.1039/c6nr02078j

M3 - Article

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SN - 2040-3364

VL - 8

SP - 9107

EP - 9112

JO - Nanoscale

JF - Nanoscale

IS - 17

ER -

Black phosphorus nonvolatile transistor memory

Abstract

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