Bipolar Resistive Switching Characteristics of Ta/Ta_xMn_yO_z/Pt Structure for ReRAM Application with Large Resistance Window

In this study, a resistive random-access memory device based on a Ta/Ta_xMn_yO_z/Pt metal–insulator–metal structure was fabricated and examined. The test device exhibited stable bipolar resistive switching characteristics with DC endurance of more than 300 cycles and robust retention up to 10⁴ s at room temperature. Moreover, the device had a low forming voltage and a resistance window of ~ 10³. The conduction mechanism in each resistance state of the device was analyzed through current–voltage curve fitting. It was confirmed that the primary conduction mechanisms were ohmic and Poole–Frenkel conduction in the low- and high-resistance states, respectively. By analyzing the cross section of the fabricated device through transmission electron microscopy, it was found that the Ta_xMn_yO_z layer was deposited in amorphous form. The composition and chemical bonding state of the Ta_xMn_yO_z layer were also analyzed using X-ray photoelectron spectroscopy. With these characteristics, the amorphous Ta_xMn_yO_z layer has strong potential for nonvolatile memory applications. Graphical Abstract: [Figure not available: see fulltext.].