Bidentate enaminolate-based indium complexes as volatile precursors for atomic layer deposition

  • Dong Hyeon Bang
  • , Yongmin Go
  • , Sunyoung Shin
  • , Ji Yeon Ryu
  • , Seung Uk Son
  • , Bo Keun Park

Research output: Contribution to journalArticlepeer-review

Abstract

A new series of heteroleptic indium precursors—[In(Me)2(dmadmb)]2 (1), [In(Me)2(deadmb)]2 (2), and [In(Me)2(emadmb)]2 (3)—was synthesized by introducing enaminolate ligands, namely dmadmb (1-(dimethylamino)-3,3-dimethylbutan-2-one), deadmb (1-(diethylamino)-3,3-dimethylbutan-2-one), and emadmb (1-(ethyl(methyl)amino)-3,3-dimethylbutan-2-one), into InMe₂Cl. The molecular structures of the synthesized indium complexes 1, 2, and 3 were confirmed by single-crystal X-ray diffraction analysis (SC-XRD), which revealed that all indium complexes adopted dimeric structures featuring distorted trigonal bipyramidal coordination geometries. Thermogravimetric analysis (TGA) demonstrated that all three complexes exhibited single-step weight loss, leaving non-volatile residues of 24 % (1), 30 % (2), and 20 % (3) up to 500 °C. Furthermore, the sublimation temperatures of complexes 1–3 were observed to range from 30 to 35 °C under a reduced pressure of 0.65 Torr. These thermal behaviors and volatility characteristics indicate that complexes 1–3 are promising candidates as precursors for atomic layer deposition (ALD) processes.

Original languageEnglish
Article number117752
JournalPolyhedron
Volume281
DOIs
StatePublished - 1 Nov 2025

Keywords

  • Atomic layer deposition
  • Indium oxide
  • Precursor
  • Volatile

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