Bias-stress-induced charge trapping in flexible polymer gate dielectrics in organic TFTs

Boseok Kang; Hyun Ho Choi; Kilwon Cho

doi:10.1002/sdtp.10279

Bias-stress-induced charge trapping in flexible polymer gate dielectrics in organic TFTs

Boseok Kang
, Hyun Ho Choi
, Kilwon Cho

Pohang University of Science and Technology

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Recent studies by our group on bias-stress-driven electrical instabilities in organic thin-film transistors (OTFTs) are described. When OTFTs are operated under continuous gate and source/drain biases, the resulting bias stresses can degrade overall device performance. Here, general methods for analyzing such bias instabilities are introduced. Based on these methods, it is demonstrated that the polymer chain ends of polymer gate dielectrics can act as charge trapping sites. Furthermore, a new strategy for analyzing charge traps at the semiconductor- dielectric interface is introduced.

Original language	English
Pages (from-to)	966-968
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	46
Issue number	Book 2
DOIs	https://doi.org/10.1002/sdtp.10279
State	Published - 1 Jun 2015
Externally published	Yes
Event	2015 SID International Symposium - San Jose, United States Duration: 4 Jun 2015 → 5 Jun 2015

Keywords

Bias stability
Charge trapping
Organic semiconductor
Organic transistors
Polymer gate dielectric

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10.1002/sdtp.10279

Cite this

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title = "Bias-stress-induced charge trapping in flexible polymer gate dielectrics in organic TFTs",

abstract = "Recent studies by our group on bias-stress-driven electrical instabilities in organic thin-film transistors (OTFTs) are described. When OTFTs are operated under continuous gate and source/drain biases, the resulting bias stresses can degrade overall device performance. Here, general methods for analyzing such bias instabilities are introduced. Based on these methods, it is demonstrated that the polymer chain ends of polymer gate dielectrics can act as charge trapping sites. Furthermore, a new strategy for analyzing charge traps at the semiconductor- dielectric interface is introduced.",

keywords = "Bias stability, Charge trapping, Organic semiconductor, Organic transistors, Polymer gate dielectric",

author = "Boseok Kang and Choi, \{Hyun Ho\} and Kilwon Cho",

note = "Publisher Copyright: {\textcopyright} 2015 SID.; 2015 SID International Symposium ; Conference date: 04-06-2015 Through 05-06-2015",

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T1 - Bias-stress-induced charge trapping in flexible polymer gate dielectrics in organic TFTs

AU - Kang, Boseok

AU - Choi, Hyun Ho

AU - Cho, Kilwon

PY - 2015/6/1

Y1 - 2015/6/1

N2 - Recent studies by our group on bias-stress-driven electrical instabilities in organic thin-film transistors (OTFTs) are described. When OTFTs are operated under continuous gate and source/drain biases, the resulting bias stresses can degrade overall device performance. Here, general methods for analyzing such bias instabilities are introduced. Based on these methods, it is demonstrated that the polymer chain ends of polymer gate dielectrics can act as charge trapping sites. Furthermore, a new strategy for analyzing charge traps at the semiconductor- dielectric interface is introduced.

AB - Recent studies by our group on bias-stress-driven electrical instabilities in organic thin-film transistors (OTFTs) are described. When OTFTs are operated under continuous gate and source/drain biases, the resulting bias stresses can degrade overall device performance. Here, general methods for analyzing such bias instabilities are introduced. Based on these methods, it is demonstrated that the polymer chain ends of polymer gate dielectrics can act as charge trapping sites. Furthermore, a new strategy for analyzing charge traps at the semiconductor- dielectric interface is introduced.

KW - Bias stability

KW - Charge trapping

KW - Organic semiconductor

KW - Organic transistors

KW - Polymer gate dielectric

UR - https://www.scopus.com/pages/publications/84962832791

U2 - 10.1002/sdtp.10279

DO - 10.1002/sdtp.10279

M3 - Conference article

AN - SCOPUS:84962832791

SN - 0097-966X

VL - 46

SP - 966

EP - 968

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - Book 2

T2 - 2015 SID International Symposium

Y2 - 4 June 2015 through 5 June 2015

ER -

Bias-stress-induced charge trapping in flexible polymer gate dielectrics in organic TFTs

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Keywords

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