Ballistic hot electron transport in graphene

Wang Kong Tse; E. H. Hwang; S. Das Sarma

doi:10.1063/1.2956669

Ballistic hot electron transport in graphene

Wang Kong Tse
, E. H. Hwang
, S. Das Sarma

University of Maryland, College Park

Research output: Contribution to journal › Article › peer-review

109 Scopus citations

Abstract

We theoretically study the inelastic scattering rate and the carrier mean free path for energetic hot electrons in graphene, including both electron-electron and electron-phonon interactions. Taking account of optical phonon emission and electron-electron scattering, we find that the inelastic scattering time τ∼ 10^-2 - 10^-1 ps and the mean free path l∼10- 10² nm for electron densities n= 10¹² - 10¹³ cm^-2. In particular, we find that the mean free path exhibits a finite jump at the phonon energy 200 meV due to electron-phonon interaction. Our results are directly applicable to device structures where ballistic transport is relevant with inelastic scattering dominating over elastic scattering.

Original language	English
Article number	023128
Journal	Applied Physics Letters
Volume	93
Issue number	2
DOIs	https://doi.org/10.1063/1.2956669
State	Published - 14 Jul 2008
Externally published	Yes

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title = "Ballistic hot electron transport in graphene",

abstract = "We theoretically study the inelastic scattering rate and the carrier mean free path for energetic hot electrons in graphene, including both electron-electron and electron-phonon interactions. Taking account of optical phonon emission and electron-electron scattering, we find that the inelastic scattering time τ∼ 10-2 - 10-1 ps and the mean free path l∼10- 102 nm for electron densities n= 1012 - 1013 cm-2. In particular, we find that the mean free path exhibits a finite jump at the phonon energy 200 meV due to electron-phonon interaction. Our results are directly applicable to device structures where ballistic transport is relevant with inelastic scattering dominating over elastic scattering.",

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AU - Tse, Wang Kong

AU - Hwang, E. H.

AU - Das Sarma, S.

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N2 - We theoretically study the inelastic scattering rate and the carrier mean free path for energetic hot electrons in graphene, including both electron-electron and electron-phonon interactions. Taking account of optical phonon emission and electron-electron scattering, we find that the inelastic scattering time τ∼ 10-2 - 10-1 ps and the mean free path l∼10- 102 nm for electron densities n= 1012 - 1013 cm-2. In particular, we find that the mean free path exhibits a finite jump at the phonon energy 200 meV due to electron-phonon interaction. Our results are directly applicable to device structures where ballistic transport is relevant with inelastic scattering dominating over elastic scattering.

AB - We theoretically study the inelastic scattering rate and the carrier mean free path for energetic hot electrons in graphene, including both electron-electron and electron-phonon interactions. Taking account of optical phonon emission and electron-electron scattering, we find that the inelastic scattering time τ∼ 10-2 - 10-1 ps and the mean free path l∼10- 102 nm for electron densities n= 1012 - 1013 cm-2. In particular, we find that the mean free path exhibits a finite jump at the phonon energy 200 meV due to electron-phonon interaction. Our results are directly applicable to device structures where ballistic transport is relevant with inelastic scattering dominating over elastic scattering.

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Ballistic hot electron transport in graphene

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