Author Correction: Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors (npj 2D Materials and Applications, (2021), 5, 1, (46), 10.1038/s41699-021-00229-w)

Hae Won Cho; Pavan Pujar; Minsu Choi; Seunghun Kang; Seongin Hong; Junwoo Park; Seungho Baek; Yunseok Kim; Jaichan Lee; Sunkook Kim

doi:10.1038/s41699-021-00240-1

Author Correction: Direct growth of orthorhombic Hf_0.5Zr_0.5O₂ thin films for hysteresis-free MoS₂ negative capacitance field-effect transistors (npj 2D Materials and Applications, (2021), 5, 1, (46), 10.1038/s41699-021-00229-w)

Hae Won Cho
, Pavan Pujar
, Minsu Choi
, Seunghun Kang
, Seongin Hong
, Junwoo Park
, Seungho Baek
, Yunseok Kim
, Jaichan Lee
, Sunkook Kim

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Comment/debate

1 Scopus citations

Abstract

The original version of this Article contained an error in the Acknowledgements: ‘2021R1A2B5B0200216’ should have read ‘2021R1A2B5B02002167’. This has now been corrected in both the PDF and HTML versions of the Article.

Original language	English
Article number	58
Journal	npj 2D Materials and Applications
Volume	5
Issue number	1
DOIs	https://doi.org/10.1038/s41699-021-00240-1
State	Published - Dec 2021

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Cho, H. W., Pujar, P., Choi, M., Kang, S., Hong, S., Park, J., Baek, S., Kim, Y., Lee, J., & Kim, S. (2021). Author Correction: Direct growth of orthorhombic Hf_0.5Zr_0.5O₂ thin films for hysteresis-free MoS₂ negative capacitance field-effect transistors (npj 2D Materials and Applications, (2021), 5, 1, (46), 10.1038/s41699-021-00229-w). npj 2D Materials and Applications, 5(1), Article 58. https://doi.org/10.1038/s41699-021-00240-1

@article{c15d6e1e1ce14f2895586419776efd37,

title = "Author Correction: Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors (npj 2D Materials and Applications, (2021), 5, 1, (46), 10.1038/s41699-021-00229-w)",

abstract = "The original version of this Article contained an error in the Acknowledgements: {\textquoteleft}2021R1A2B5B0200216{\textquoteright} should have read {\textquoteleft}2021R1A2B5B02002167{\textquoteright}. This has now been corrected in both the PDF and HTML versions of the Article.",

author = "Cho, \{Hae Won\} and Pavan Pujar and Minsu Choi and Seunghun Kang and Seongin Hong and Junwoo Park and Seungho Baek and Yunseok Kim and Jaichan Lee and Sunkook Kim",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2021.",

year = "2021",

month = dec,

doi = "10.1038/s41699-021-00240-1",

language = "English",

volume = "5",

journal = "npj 2D Materials and Applications",

issn = "2397-7132",

publisher = "Nature Publishing Group",

number = "1",

}

Cho, HW, Pujar, P, Choi, M, Kang, S, Hong, S, Park, J, Baek, S, Kim, Y , Lee, J & Kim, S 2021, 'Author Correction: Direct growth of orthorhombic Hf_0.5Zr_0.5O₂ thin films for hysteresis-free MoS₂ negative capacitance field-effect transistors (npj 2D Materials and Applications, (2021), 5, 1, (46), 10.1038/s41699-021-00229-w)', npj 2D Materials and Applications, vol. 5, no. 1, 58. https://doi.org/10.1038/s41699-021-00240-1

Author Correction: Direct growth of orthorhombic Hf_0.5Zr_0.5O₂ thin films for hysteresis-free MoS₂ negative capacitance field-effect transistors (npj 2D Materials and Applications, (2021), 5, 1, (46), 10.1038/s41699-021-00229-w). / Cho, Hae Won; Pujar, Pavan; Choi, Minsu et al.
In: npj 2D Materials and Applications, Vol. 5, No. 1, 58, 12.2021.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Author Correction

T2 - Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors (npj 2D Materials and Applications, (2021), 5, 1, (46), 10.1038/s41699-021-00229-w)

AU - Cho, Hae Won

AU - Pujar, Pavan

AU - Choi, Minsu

AU - Kang, Seunghun

AU - Hong, Seongin

AU - Park, Junwoo

AU - Baek, Seungho

AU - Kim, Yunseok

AU - Lee, Jaichan

AU - Kim, Sunkook

PY - 2021/12

Y1 - 2021/12

N2 - The original version of this Article contained an error in the Acknowledgements: ‘2021R1A2B5B0200216’ should have read ‘2021R1A2B5B02002167’. This has now been corrected in both the PDF and HTML versions of the Article.

AB - The original version of this Article contained an error in the Acknowledgements: ‘2021R1A2B5B0200216’ should have read ‘2021R1A2B5B02002167’. This has now been corrected in both the PDF and HTML versions of the Article.

UR - https://www.scopus.com/pages/publications/85106951941

U2 - 10.1038/s41699-021-00240-1

DO - 10.1038/s41699-021-00240-1

M3 - Comment/debate

AN - SCOPUS:85106951941

SN - 2397-7132

VL - 5

JO - npj 2D Materials and Applications

JF - npj 2D Materials and Applications

IS - 1

M1 - 58

ER -