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Atomic layer etching of BeO using BCl3/Ar for the interface passivation layer of III-V MOS devices

  • K. S. Min
  • , S. H. Kang
  • , J. K. Kim
  • , J. H. Yum
  • , Y. I. Jhon
  • , Todd W. Hudnall
  • , C. W. Bielawski
  • , S. K. Banerjee
  • , G. Bersuker
  • , M. S. Jhon
  • , G. Y. Yeom

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