Atomic layer etching of BeO using BCl3/Ar for the interface passivation layer of III-V MOS devices
- K. S. Min
- , S. H. Kang
- , J. K. Kim
- , J. H. Yum
- , Y. I. Jhon
- , Todd W. Hudnall
- , C. W. Bielawski
- , S. K. Banerjee
- , G. Bersuker
- , M. S. Jhon
- , G. Y. Yeom
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