Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces

Woo Seok Choi; Christopher M. Rouleau; Sung Seok A. Seo; Zhenlin Luo; Hua Zhou; Timothy T. Fister; Jeffrey A. Eastman; Paul H. Fuoss; Dillon D. Fong; Jonathan Z. Tischler; Gyula Eres; Matthew F. Chisholm; Ho Nyung Lee

doi:10.1002/adma.201202691

Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces

Woo Seok Choi
, Christopher M. Rouleau
, Sung Seok A. Seo
, Zhenlin Luo
, Hua Zhou
, Timothy T. Fister
, Jeffrey A. Eastman
, Paul H. Fuoss
, Dillon D. Fong
, Jonathan Z. Tischler
, Gyula Eres
, Matthew F. Chisholm
, Ho Nyung Lee

Oak Ridge National Laboratory
University of Kentucky
Argonne National Laboratory
University of Science and Technology of China
United States Department of Energy

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

Atomic layer engineering enables fabrication of a chemically sharp oxide heterointerface. The interface formation and strain evolution during the initial growth of LaAlO₃/SrTiO₃ heterostructures by pulsed laser deposition are investigated in search of a means for controlling the atomic-sharpness of the interface. This study shows that inserting a monolayer of LaAlO₃ grown at high oxygen pressure dramatically enhances interface abruptness.

Original language	English
Pages (from-to)	6423-6428
Number of pages	6
Journal	Advanced Materials
Volume	24
Issue number	48
DOIs	https://doi.org/10.1002/adma.201202691
State	Published - 18 Dec 2012
Externally published	Yes

Keywords

atomic layer engineering
epitaxial strain
LaAlO /SrTiO
perovskite oxide interface
pulsed laser deposition

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10.1002/adma.201202691

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title = "Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces",

abstract = "Atomic layer engineering enables fabrication of a chemically sharp oxide heterointerface. The interface formation and strain evolution during the initial growth of LaAlO3/SrTiO3 heterostructures by pulsed laser deposition are investigated in search of a means for controlling the atomic-sharpness of the interface. This study shows that inserting a monolayer of LaAlO3 grown at high oxygen pressure dramatically enhances interface abruptness.",

keywords = "atomic layer engineering, epitaxial strain, LaAlO /SrTiO, perovskite oxide interface, pulsed laser deposition",

author = "Choi, \{Woo Seok\} and Rouleau, \{Christopher M.\} and Seo, \{Sung Seok A.\} and Zhenlin Luo and Hua Zhou and Fister, \{Timothy T.\} and Eastman, \{Jeffrey A.\} and Fuoss, \{Paul H.\} and Fong, \{Dillon D.\} and Tischler, \{Jonathan Z.\} and Gyula Eres and Chisholm, \{Matthew F.\} and Lee, \{Ho Nyung\}",

year = "2012",

month = dec,

day = "18",

doi = "10.1002/adma.201202691",

language = "English",

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journal = "Advanced Materials",

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T1 - Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces

AU - Choi, Woo Seok

AU - Rouleau, Christopher M.

AU - Seo, Sung Seok A.

AU - Luo, Zhenlin

AU - Zhou, Hua

AU - Fister, Timothy T.

AU - Eastman, Jeffrey A.

AU - Fuoss, Paul H.

AU - Fong, Dillon D.

AU - Tischler, Jonathan Z.

AU - Eres, Gyula

AU - Chisholm, Matthew F.

AU - Lee, Ho Nyung

PY - 2012/12/18

Y1 - 2012/12/18

N2 - Atomic layer engineering enables fabrication of a chemically sharp oxide heterointerface. The interface formation and strain evolution during the initial growth of LaAlO3/SrTiO3 heterostructures by pulsed laser deposition are investigated in search of a means for controlling the atomic-sharpness of the interface. This study shows that inserting a monolayer of LaAlO3 grown at high oxygen pressure dramatically enhances interface abruptness.

AB - Atomic layer engineering enables fabrication of a chemically sharp oxide heterointerface. The interface formation and strain evolution during the initial growth of LaAlO3/SrTiO3 heterostructures by pulsed laser deposition are investigated in search of a means for controlling the atomic-sharpness of the interface. This study shows that inserting a monolayer of LaAlO3 grown at high oxygen pressure dramatically enhances interface abruptness.

KW - atomic layer engineering

KW - epitaxial strain

KW - LaAlO /SrTiO

KW - perovskite oxide interface

KW - pulsed laser deposition

UR - https://www.scopus.com/pages/publications/84871323772

U2 - 10.1002/adma.201202691

DO - 10.1002/adma.201202691

M3 - Article

C2 - 23034879

AN - SCOPUS:84871323772

SN - 0935-9648

VL - 24

SP - 6423

EP - 6428

JO - Advanced Materials

JF - Advanced Materials

IS - 48

ER -

Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces

Abstract

Keywords

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