Atomic layer deposition of PbS-ZnS quantum wells for high-efficiency solar cells

Neil P. Dasgupta; Wonyoung Lee; Timothy P. Holme; Fritz B. Prinz

doi:10.1109/PVSC.2009.5411665

Atomic layer deposition of PbS-ZnS quantum wells for high-efficiency solar cells

Neil P. Dasgupta
, Wonyoung Lee
, Timothy P. Holme
, Fritz B. Prinz

Stanford University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Quantum confinements such as quantum wells, wires, and dots posses several advantages for next-generation solar cells. In this study, we present results on quantum confinement in PbS-ZnS quantum wells deposited by Atomic Layer Deposition (ALD). Materials selection criteria are presented with a focus on the properties of the well and barrier material. PbS quantum wells embedded in thin ZnS barrier layers are shown to demonstrate quantum confinement effects through scanning tunneling microscopy (STM). The band gap of the PbS films has been varied from 0.4-1.0 eV by varying the number of ALD cycles. The bandgap variation with film thickness is well matched to results predicted by effective-mass theory.

Original language	English
Title of host publication	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages	356-360
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2009.5411665
State	Published - 2009
Externally published	Yes
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: 7 Jun 2009 → 12 Jun 2009

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	7/06/09 → 12/06/09

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1109/PVSC.2009.5411665

Cite this

@inproceedings{ee39b95e42b447a0aacbeaae811675f6,

title = "Atomic layer deposition of PbS-ZnS quantum wells for high-efficiency solar cells",

abstract = "Quantum confinements such as quantum wells, wires, and dots posses several advantages for next-generation solar cells. In this study, we present results on quantum confinement in PbS-ZnS quantum wells deposited by Atomic Layer Deposition (ALD). Materials selection criteria are presented with a focus on the properties of the well and barrier material. PbS quantum wells embedded in thin ZnS barrier layers are shown to demonstrate quantum confinement effects through scanning tunneling microscopy (STM). The band gap of the PbS films has been varied from 0.4-1.0 eV by varying the number of ALD cycles. The bandgap variation with film thickness is well matched to results predicted by effective-mass theory.",

author = "Dasgupta, \{Neil P.\} and Wonyoung Lee and Holme, \{Timothy P.\} and Prinz, \{Fritz B.\}",

year = "2009",

doi = "10.1109/PVSC.2009.5411665",

language = "English",

isbn = "9781424429509",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "356--360",

booktitle = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009",

note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

Dasgupta, NP, Lee, W, Holme, TP & Prinz, FB 2009, Atomic layer deposition of PbS-ZnS quantum wells for high-efficiency solar cells. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411665, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 356-360, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 7/06/09. https://doi.org/10.1109/PVSC.2009.5411665

Atomic layer deposition of PbS-ZnS quantum wells for high-efficiency solar cells. / Dasgupta, Neil P.; Lee, Wonyoung; Holme, Timothy P. et al.
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 356-360 5411665 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Atomic layer deposition of PbS-ZnS quantum wells for high-efficiency solar cells

AU - Dasgupta, Neil P.

AU - Lee, Wonyoung

AU - Holme, Timothy P.

AU - Prinz, Fritz B.

PY - 2009

Y1 - 2009

N2 - Quantum confinements such as quantum wells, wires, and dots posses several advantages for next-generation solar cells. In this study, we present results on quantum confinement in PbS-ZnS quantum wells deposited by Atomic Layer Deposition (ALD). Materials selection criteria are presented with a focus on the properties of the well and barrier material. PbS quantum wells embedded in thin ZnS barrier layers are shown to demonstrate quantum confinement effects through scanning tunneling microscopy (STM). The band gap of the PbS films has been varied from 0.4-1.0 eV by varying the number of ALD cycles. The bandgap variation with film thickness is well matched to results predicted by effective-mass theory.

AB - Quantum confinements such as quantum wells, wires, and dots posses several advantages for next-generation solar cells. In this study, we present results on quantum confinement in PbS-ZnS quantum wells deposited by Atomic Layer Deposition (ALD). Materials selection criteria are presented with a focus on the properties of the well and barrier material. PbS quantum wells embedded in thin ZnS barrier layers are shown to demonstrate quantum confinement effects through scanning tunneling microscopy (STM). The band gap of the PbS films has been varied from 0.4-1.0 eV by varying the number of ALD cycles. The bandgap variation with film thickness is well matched to results predicted by effective-mass theory.

UR - https://www.scopus.com/pages/publications/77951576069

U2 - 10.1109/PVSC.2009.5411665

DO - 10.1109/PVSC.2009.5411665

M3 - Conference contribution

AN - SCOPUS:77951576069

SN - 9781424429509

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 356

EP - 360

BT - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

T2 - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

Y2 - 7 June 2009 through 12 June 2009

ER -

Atomic layer deposition of PbS-ZnS quantum wells for high-efficiency solar cells

Abstract

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Conference

UN SDGs

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