Atomic-layer-deposited ZnO thin-film transistors with various gate dielectrics

Jaehyun Yang; Joong Keun Park; Sunkook Kim; Woong Choi; Sangyoon Lee; Hyoungsub Kim

doi:10.1002/pssa.201228303

Atomic-layer-deposited ZnO thin-film transistors with various gate dielectrics

Jaehyun Yang
, Joong Keun Park
, Sunkook Kim
, Woong Choi
, Sangyoon Lee
, Hyoungsub Kim

Department of Advanced Materials Science and Engineering

Sungkyunkwan University
Kyung Hee University
Kookmin University
Samsung

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We have investigated the effects of gate dielectric layers having different microstructures on the crystallographic properties and device performances of atomic-layer-deposited (ALD) ZnO thin-film transistors (TFTs) in a bottom-gated structure. Among three gate dielectric materials (thermally grown SiO ₂, ALD-HfO ₂, and ALD-Al ₂O ₃), the ALD-ZnO layer on Al ₂O ₃ exhibited the best crystallinity and surface morphology due to the excellent surface roughness and/or hydrophilic surface polarity of the amorphous Al ₂O ₃ layer. As a result, it showed the best TFT performance, including field-effect mobility (∼3.9 cm ²/Vs), subthreshold swing (∼1.35 V/decade), and on/off ratio (∼5 × 10 ⁷).

Original language	English
Pages (from-to)	2087-2090
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	209
Issue number	10
DOIs	https://doi.org/10.1002/pssa.201228303
State	Published - Oct 2012

Keywords

atomic layer deposition
gate dielectrics
high-k dielectrics
thin film transistors
ZnO

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10.1002/pssa.201228303

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title = "Atomic-layer-deposited ZnO thin-film transistors with various gate dielectrics",

abstract = "We have investigated the effects of gate dielectric layers having different microstructures on the crystallographic properties and device performances of atomic-layer-deposited (ALD) ZnO thin-film transistors (TFTs) in a bottom-gated structure. Among three gate dielectric materials (thermally grown SiO 2, ALD-HfO 2, and ALD-Al 2O 3), the ALD-ZnO layer on Al 2O 3 exhibited the best crystallinity and surface morphology due to the excellent surface roughness and/or hydrophilic surface polarity of the amorphous Al 2O 3 layer. As a result, it showed the best TFT performance, including field-effect mobility (∼3.9 cm 2/Vs), subthreshold swing (∼1.35 V/decade), and on/off ratio (∼5 × 10 7).",

keywords = "atomic layer deposition, gate dielectrics, high-k dielectrics, thin film transistors, ZnO",

author = "Jaehyun Yang and Park, \{Joong Keun\} and Sunkook Kim and Woong Choi and Sangyoon Lee and Hyoungsub Kim",

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doi = "10.1002/pssa.201228303",

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T1 - Atomic-layer-deposited ZnO thin-film transistors with various gate dielectrics

AU - Yang, Jaehyun

AU - Park, Joong Keun

AU - Kim, Sunkook

AU - Choi, Woong

AU - Lee, Sangyoon

AU - Kim, Hyoungsub

PY - 2012/10

Y1 - 2012/10

N2 - We have investigated the effects of gate dielectric layers having different microstructures on the crystallographic properties and device performances of atomic-layer-deposited (ALD) ZnO thin-film transistors (TFTs) in a bottom-gated structure. Among three gate dielectric materials (thermally grown SiO 2, ALD-HfO 2, and ALD-Al 2O 3), the ALD-ZnO layer on Al 2O 3 exhibited the best crystallinity and surface morphology due to the excellent surface roughness and/or hydrophilic surface polarity of the amorphous Al 2O 3 layer. As a result, it showed the best TFT performance, including field-effect mobility (∼3.9 cm 2/Vs), subthreshold swing (∼1.35 V/decade), and on/off ratio (∼5 × 10 7).

AB - We have investigated the effects of gate dielectric layers having different microstructures on the crystallographic properties and device performances of atomic-layer-deposited (ALD) ZnO thin-film transistors (TFTs) in a bottom-gated structure. Among three gate dielectric materials (thermally grown SiO 2, ALD-HfO 2, and ALD-Al 2O 3), the ALD-ZnO layer on Al 2O 3 exhibited the best crystallinity and surface morphology due to the excellent surface roughness and/or hydrophilic surface polarity of the amorphous Al 2O 3 layer. As a result, it showed the best TFT performance, including field-effect mobility (∼3.9 cm 2/Vs), subthreshold swing (∼1.35 V/decade), and on/off ratio (∼5 × 10 7).

KW - atomic layer deposition

KW - gate dielectrics

KW - high-k dielectrics

KW - thin film transistors

KW - ZnO

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JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 10

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Atomic-layer-deposited ZnO thin-film transistors with various gate dielectrics

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Keywords

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