Asymmetric switching and imprint in (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 heterostructures

Chi Hong Choi; Jaichan Lee; Bae Ho Park; Tae Won Noh

doi:10.1080/10584589708221684

Asymmetric switching and imprint in (La,Sr)CoO₃/Pb(Zr,Ti)O₃/(La,Sr)CoO₃ heterostructures

Chi Hong Choi, Jaichan Lee, Bae Ho Park, Tae Won Noh

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

(La,Sr)CoO₃/Pb(Zr,Ti)O₃/(La,Sr)CoO₃ (LSCO) heterostructures have been grown on LaAlO₃ substrates by pulsed laser deposition (PLD) to investigate asymmetric polarization switching of Pb(Zr,Ti)O₃ (PZT) thin films with different electrode configuration. P-V hysteresis loop of LSCO/PZT/LSCO was symmetric. However, LaCoO₃ (LCO)/PZT/LSCO showed a largely asymmetric P-V hysteresis loop and large relaxation of the remanent polarization at the negatively poled state, which means that the negatively poled state was unstable. On the other hand, LSCO/PZT/LCO exhibited large relaxation of the positively poled state. The asymmetric behavior of the polarized states implies the presence of an internal electric field inside the PZT layer. It is suggested that the internal electric field caused by built-in voltages at LCO/PZT and LSCO/PZT interfaces. The built-in voltages at LCO/PZT and LSCO/PZT interfaces were 0.6 eV and 2.1 eV, respectively.

Original language	English
Pages (from-to)	39-48
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	18
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589708221684
State	Published - 1997

Keywords

Asymmetric
Built-in voltage
Imprint
PZT capacitor

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10.1080/10584589708221684

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@article{7581c25a0ac94cdc9bcba571e2541c09,

title = "Asymmetric switching and imprint in (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 heterostructures",

abstract = "(La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures have been grown on LaAlO3 substrates by pulsed laser deposition (PLD) to investigate asymmetric polarization switching of Pb(Zr,Ti)O3 (PZT) thin films with different electrode configuration. P-V hysteresis loop of LSCO/PZT/LSCO was symmetric. However, LaCoO3 (LCO)/PZT/LSCO showed a largely asymmetric P-V hysteresis loop and large relaxation of the remanent polarization at the negatively poled state, which means that the negatively poled state was unstable. On the other hand, LSCO/PZT/LCO exhibited large relaxation of the positively poled state. The asymmetric behavior of the polarized states implies the presence of an internal electric field inside the PZT layer. It is suggested that the internal electric field caused by built-in voltages at LCO/PZT and LSCO/PZT interfaces. The built-in voltages at LCO/PZT and LSCO/PZT interfaces were 0.6 eV and 2.1 eV, respectively.",

keywords = "Asymmetric, Built-in voltage, Imprint, PZT capacitor",

author = "Choi, \{Chi Hong\} and Jaichan Lee and Park, \{Bae Ho\} and Noh, \{Tae Won\}",

year = "1997",

doi = "10.1080/10584589708221684",

language = "English",

volume = "18",

pages = "39--48",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1-4",

}

TY - JOUR

T1 - Asymmetric switching and imprint in (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 heterostructures

AU - Choi, Chi Hong

AU - Lee, Jaichan

AU - Park, Bae Ho

AU - Noh, Tae Won

PY - 1997

Y1 - 1997

N2 - (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures have been grown on LaAlO3 substrates by pulsed laser deposition (PLD) to investigate asymmetric polarization switching of Pb(Zr,Ti)O3 (PZT) thin films with different electrode configuration. P-V hysteresis loop of LSCO/PZT/LSCO was symmetric. However, LaCoO3 (LCO)/PZT/LSCO showed a largely asymmetric P-V hysteresis loop and large relaxation of the remanent polarization at the negatively poled state, which means that the negatively poled state was unstable. On the other hand, LSCO/PZT/LCO exhibited large relaxation of the positively poled state. The asymmetric behavior of the polarized states implies the presence of an internal electric field inside the PZT layer. It is suggested that the internal electric field caused by built-in voltages at LCO/PZT and LSCO/PZT interfaces. The built-in voltages at LCO/PZT and LSCO/PZT interfaces were 0.6 eV and 2.1 eV, respectively.

AB - (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures have been grown on LaAlO3 substrates by pulsed laser deposition (PLD) to investigate asymmetric polarization switching of Pb(Zr,Ti)O3 (PZT) thin films with different electrode configuration. P-V hysteresis loop of LSCO/PZT/LSCO was symmetric. However, LaCoO3 (LCO)/PZT/LSCO showed a largely asymmetric P-V hysteresis loop and large relaxation of the remanent polarization at the negatively poled state, which means that the negatively poled state was unstable. On the other hand, LSCO/PZT/LCO exhibited large relaxation of the positively poled state. The asymmetric behavior of the polarized states implies the presence of an internal electric field inside the PZT layer. It is suggested that the internal electric field caused by built-in voltages at LCO/PZT and LSCO/PZT interfaces. The built-in voltages at LCO/PZT and LSCO/PZT interfaces were 0.6 eV and 2.1 eV, respectively.

KW - Asymmetric

KW - Built-in voltage

KW - Imprint

KW - PZT capacitor

UR - https://www.scopus.com/pages/publications/0031355845

U2 - 10.1080/10584589708221684

DO - 10.1080/10584589708221684

M3 - Article

AN - SCOPUS:0031355845

SN - 1058-4587

VL - 18

SP - 39

EP - 48

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

ER -

Asymmetric switching and imprint in (La,Sr)CoO₃/Pb(Zr,Ti)O₃/(La,Sr)CoO₃ heterostructures

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